Solution-processable assembly of 2D semiconductor thin films and superlattices with photoluminescent monolayer inks

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F24%3A43929966" target="_blank" >RIV/60461373:22310/24:43929966 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.researchgate.net/profile/Yongping-Dai/publication/378168082_Solution-processable_assembly_of_2D_semiconductor_thin_films_and_superlattices_with_photoluminescent_monolayer_inks/links/65d0a4ee476dd15fb343ea6c/Solution-processable-assembly-of-2D-semiconductor-thin-films-and-superlattices-with-photoluminescent-monolayer-inks.pdf" target="_blank" >https://www.researchgate.net/profile/Yongping-Dai/publication/378168082_Solution-processable_assembly_of_2D_semiconductor_thin_films_and_superlattices_with_photoluminescent_monolayer_inks/links/65d0a4ee476dd15fb343ea6c/Solution-processable-assembly-of-2D-semiconductor-thin-films-and-superlattices-with-photoluminescent-monolayer-inks.pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.chempr.2024.01.016" target="_blank" >10.1016/j.chempr.2024.01.016</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Solution-processable assembly of 2D semiconductor thin films and superlattices with photoluminescent monolayer inks

Popis výsledku v původním jazyce

The controllable and precise synthesis of two-dimensional (2D) semiconductor thin films and superlattices with arbitrary thickness and composition (e.g., selective production of pure monolayer, bilayer, trilayer, and more) has been a long-standing challenge for both vapor-based chemical vapor deposition and solution-based methods. Here, we report the solution-processable layer-by-layer assembly of 2D thin films with precisely controlled thickness down to atomic scale (e.g., 1-10 layers and more for MoS2) using high-purity 2D monolayer ink materials. We have realized the general and scalable synthesis of high-quality photoluminescent 2D semiconductor monolayers in solution phase, including MoS2, MoSe2, WS2, WSe2, and others (monolayer purity &gt; 98%), which even exhibit liquid-state fluorescence (e.g., 658 nm for MoS2 and 746 nm for WSe2). Furthermore, we have ink-printed photoluminescent MoS2/Ca2Nb3O10 thin-film superlattice with visible light emission. At last, this strategy is general for solution-processable assembly of versatile multilayer inorganic/inorganic and organic/inorganic superlattice materials, including InSe/In2Se3, NbS2/PVP/MoS2, TaS2/PVP/THAB/In2Se3, and others.

Název v anglickém jazyce

Solution-processable assembly of 2D semiconductor thin films and superlattices with photoluminescent monolayer inks

Popis výsledku anglicky

The controllable and precise synthesis of two-dimensional (2D) semiconductor thin films and superlattices with arbitrary thickness and composition (e.g., selective production of pure monolayer, bilayer, trilayer, and more) has been a long-standing challenge for both vapor-based chemical vapor deposition and solution-based methods. Here, we report the solution-processable layer-by-layer assembly of 2D thin films with precisely controlled thickness down to atomic scale (e.g., 1-10 layers and more for MoS2) using high-purity 2D monolayer ink materials. We have realized the general and scalable synthesis of high-quality photoluminescent 2D semiconductor monolayers in solution phase, including MoS2, MoSe2, WS2, WSe2, and others (monolayer purity &gt; 98%), which even exhibit liquid-state fluorescence (e.g., 658 nm for MoS2 and 746 nm for WSe2). Furthermore, we have ink-printed photoluminescent MoS2/Ca2Nb3O10 thin-film superlattice with visible light emission. At last, this strategy is general for solution-processable assembly of versatile multilayer inorganic/inorganic and organic/inorganic superlattice materials, including InSe/In2Se3, NbS2/PVP/MoS2, TaS2/PVP/THAB/In2Se3, and others.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Chem

ISSN

2451-9294

e-ISSN

2451-9294

Svazek periodika

10

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

15

Strana od-do

—

Kód UT WoS článku

001241460100001

EID výsledku v databázi Scopus

2-s2.0-85191183342