Radiation measurements after radiation of silicon for neutron transmutation doping

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F26722445%3A_____%2F14%3A%230000921" target="_blank" >RIV/26722445:_____/14:#0000921 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.radphyschem.2012.12.024" target="_blank" >http://dx.doi.org/10.1016/j.radphyschem.2012.12.024</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.radphyschem.2012.12.024" target="_blank" >10.1016/j.radphyschem.2012.12.024</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Radiation measurements after radiation of silicon for neutron transmutation doping

Popis výsledku v původním jazyce

Neutron transmutation doping of semiconductors is an important method for applications that require high dopant homogeneity. For silicon, it is based on the conversion of 30Si into 31P through a 30Si (n,?) 31Si reaction during neutron irradiation following beta decay of 31Si to 31P. Neutron irradiation is usually performed in research reactors. The main characteristics of a doped silicon sample are (1) purity of the original silicon, (2) average phosphorus concentration and (3) phosphorus concentrationhomogeneity (uniformity). This paper describes measurement methods that utilise radiation induced during doping irradiation to measure these characteristics. The first two parameters can be measured using gamma spectrometry. The main part of the paper deals with homogeneity measurement. It describes a measurement method that is based on the detection of beta radiation from 31Si. Examples of experimental results are given. The experiments were performed in the LVR-15 research reactor.

Název v anglickém jazyce

Radiation measurements after radiation of silicon for neutron transmutation doping

Popis výsledku anglicky

Neutron transmutation doping of semiconductors is an important method for applications that require high dopant homogeneity. For silicon, it is based on the conversion of 30Si into 31P through a 30Si (n,?) 31Si reaction during neutron irradiation following beta decay of 31Si to 31P. Neutron irradiation is usually performed in research reactors. The main characteristics of a doped silicon sample are (1) purity of the original silicon, (2) average phosphorus concentration and (3) phosphorus concentrationhomogeneity (uniformity). This paper describes measurement methods that utilise radiation induced during doping irradiation to measure these characteristics. The first two parameters can be measured using gamma spectrometry. The main part of the paper deals with homogeneity measurement. It describes a measurement method that is based on the detection of beta radiation from 31Si. Examples of experimental results are given. The experiments were performed in the LVR-15 research reactor.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JF - Jaderná energetika

OECD FORD obor

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Projekt

<a href="/cs/project/FR-TI1%2F397" target="_blank" >FR-TI1/397: VÝVOJ A VYUŽITÍ METODIK A PROSTŘEDKŮ POTŘEBNÝCH K OZAŘOVÁNÍ VZORKŮ NEUTRONY NA VÝZKUMNÉM JADERNÉM REAKTORU</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Radiation Physics and Chemistry

ISSN

0969-806X

e-ISSN

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Svazek periodika

95

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

3

Strana od-do

389-391

Kód UT WoS článku

000329271400101

EID výsledku v databázi Scopus

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