Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F44555601%3A13440%2F18%3A43893791" target="_blank" >RIV/44555601:13440/18:43893791 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/18:00492476 RIV/61389005:_____/18:00492476 RIV/60461373:22310/18:43917009 RIV/68407700:21230/18:00324878

Výsledek na webu

<a href="http://www.mdpi.com/2072-666X/9/7/316/htm" target="_blank" >http://www.mdpi.com/2072-666X/9/7/316/htm</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/mi9070316" target="_blank" >10.3390/mi9070316</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing

Popis výsledku v původním jazyce

We present a fundamental study of the erbium luminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at fluences up to 5 x 1015 ions.cm-2, followed by annealing at controllable temperature in Ar atmosphere or vacuum to enhance the near infrared photoluminescence. The Rutherford Backscattering Spectrometry showed that Er concentration maximum determined for NCD films is slightly shifted to the depth with respect to the Stopping and Range of Ions in Matter simulation. The number of the displaced atoms per depth slightly increased with the fluence, but in fact the maximum reached the fully disordered target even in the lowest ion fluence used. The post-implantation annealing at 800 oC in vacuum had a further beneficial effect on erbium luminescence intensity at around 1.5 ?m, especially for the Er-doped NCD films, which contain a higher amount of grain boundaries than single-crystalline diamond.

Název v anglickém jazyce

Erbium Luminescence Centres in Single- and Nano-Crystalline Diamond-Effects of Ion Implantation Fluence and Thermal Annealing

Popis výsledku anglicky

We present a fundamental study of the erbium luminescence centres in single- and nano-crystalline (NCD) diamonds. Both diamond forms were doped with Er using ion implantation with the energy of 190 keV at fluences up to 5 x 1015 ions.cm-2, followed by annealing at controllable temperature in Ar atmosphere or vacuum to enhance the near infrared photoluminescence. The Rutherford Backscattering Spectrometry showed that Er concentration maximum determined for NCD films is slightly shifted to the depth with respect to the Stopping and Range of Ions in Matter simulation. The number of the displaced atoms per depth slightly increased with the fluence, but in fact the maximum reached the fully disordered target even in the lowest ion fluence used. The post-implantation annealing at 800 oC in vacuum had a further beneficial effect on erbium luminescence intensity at around 1.5 ?m, especially for the Er-doped NCD films, which contain a higher amount of grain boundaries than single-crystalline diamond.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Micromachines

ISSN

2072-666X

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

14

Strana od-do

"nestrankovano"

Kód UT WoS článku

000441156000004

EID výsledku v databázi Scopus

2-s2.0-85049606274