Co-implantation of Er and Yb ions into single-crystalline and nano-crystalline diamond

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43917014" target="_blank" >RIV/60461373:22310/18:43917014 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/18:00500971 RIV/67985882:_____/18:00500971 RIV/61389005:_____/18:00500971

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/sia.6407" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/sia.6407</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/sia.6407" target="_blank" >10.1002/sia.6407</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Co-implantation of Er and Yb ions into single-crystalline and nano-crystalline diamond

Popis výsledku v původním jazyce

The paper reports on the results of Er-Yb and Er-Al co-implantation into commercial single-crystalline diamonds as well as into nano-crystalline diamond (NCD) thin films and their photoluminescence properties. The NCD thin films were deposited on fused silica glass by linear-antenna microwave plasma-enhanced chemical vapour deposition (PE MWCVD). Er implantation was performed at an energy of 190 keV and fluences of 1 x 10(15) and 5 x 10(15) ions. cm(-2) followed by Yb co-implantation under the same conditions or Al co-implantation at an energy of 40 keV and the same fluences. The concentration depth profiles of the elements and the degree of their crystal damage (structural ordering) were measured using Rutherford backscattering spectroscopy and Rutherford backscattering spectroscopy/channelling, respectively. Structural changes were studied by Raman spectroscopy. All Er-Yb doped samples revealed measurable photoluminescence at approximately 1.5 mu m. A comparison with Er-implanted samples showed that the Er-Yb co-implantation was beneficial for the photoluminescence at 1.5 mu m in both substrates. Er-doped NCD films revealed higher intensity of luminescence than Er-doped single-crystal diamond. This observation is attributed to the specific incorporation of Er into the diamond and at the grain boundaries.

Název v anglickém jazyce

Co-implantation of Er and Yb ions into single-crystalline and nano-crystalline diamond

Popis výsledku anglicky

The paper reports on the results of Er-Yb and Er-Al co-implantation into commercial single-crystalline diamonds as well as into nano-crystalline diamond (NCD) thin films and their photoluminescence properties. The NCD thin films were deposited on fused silica glass by linear-antenna microwave plasma-enhanced chemical vapour deposition (PE MWCVD). Er implantation was performed at an energy of 190 keV and fluences of 1 x 10(15) and 5 x 10(15) ions. cm(-2) followed by Yb co-implantation under the same conditions or Al co-implantation at an energy of 40 keV and the same fluences. The concentration depth profiles of the elements and the degree of their crystal damage (structural ordering) were measured using Rutherford backscattering spectroscopy and Rutherford backscattering spectroscopy/channelling, respectively. Structural changes were studied by Raman spectroscopy. All Er-Yb doped samples revealed measurable photoluminescence at approximately 1.5 mu m. A comparison with Er-implanted samples showed that the Er-Yb co-implantation was beneficial for the photoluminescence at 1.5 mu m in both substrates. Er-doped NCD films revealed higher intensity of luminescence than Er-doped single-crystal diamond. This observation is attributed to the specific incorporation of Er into the diamond and at the grain boundaries.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21001 - Nano-materials (production and properties)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Surface Interface Analysis

ISSN

0142-2421

e-ISSN

—

Svazek periodika

50

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

1218-1223

Kód UT WoS článku

000448889600044

EID výsledku v databázi Scopus

2-s2.0-85042789506