Analytical Prediction of Highly Sensitive CNT-FET-Based Sensor Performance for Detection of Gas Molecules

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24210%2F20%3A00007884" target="_blank" >RIV/46747885:24210/20:00007884 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/46747885:24620/20:00007884

Výsledek na webu

<a href="https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8955777" target="_blank" >https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8955777</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ACCESS.2020.2965806" target="_blank" >10.1109/ACCESS.2020.2965806</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Analytical Prediction of Highly Sensitive CNT-FET-Based Sensor Performance for Detection of Gas Molecules

Popis výsledku v původním jazyce

In this study, a set of new analytical models to predict and investigate the impacts of gas adsorption on the electronic band structure and electrical transport properties of the single-wall carbon nanotube field-effect transistor (SWCNT-FET) based gas sensor are proposed. The sensing mechanism is based on introducing new hopping energy and on-site energy parameters for gas-carbon interactions representing the charge transfer between gas molecules (CO2, NH3, and H2O) and the hopping energies between carbon atoms of the CNT and gas molecule. The modeling starts from the atomic level to the device level using the tight-binding technique to formulate molecular adsorption effects on the energy band structure, density of states, carrier velocity, and I-V characteristics. Therefore, the variation of the energy bandgap, density of states and current-voltage properties of the CNT sensor in the presence of the gas molecules is discovered and discussed. The simulated results show that the proposed analytical models can be used with an electrical CNT gas sensor to predict the behavior of sensing mechanisms in gas sensors.

Název v anglickém jazyce

Analytical Prediction of Highly Sensitive CNT-FET-Based Sensor Performance for Detection of Gas Molecules

Popis výsledku anglicky

In this study, a set of new analytical models to predict and investigate the impacts of gas adsorption on the electronic band structure and electrical transport properties of the single-wall carbon nanotube field-effect transistor (SWCNT-FET) based gas sensor are proposed. The sensing mechanism is based on introducing new hopping energy and on-site energy parameters for gas-carbon interactions representing the charge transfer between gas molecules (CO2, NH3, and H2O) and the hopping energies between carbon atoms of the CNT and gas molecule. The modeling starts from the atomic level to the device level using the tight-binding technique to formulate molecular adsorption effects on the energy band structure, density of states, carrier velocity, and I-V characteristics. Therefore, the variation of the energy bandgap, density of states and current-voltage properties of the CNT sensor in the presence of the gas molecules is discovered and discussed. The simulated results show that the proposed analytical models can be used with an electrical CNT gas sensor to predict the behavior of sensing mechanisms in gas sensors.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/EF16_025%2F0007293" target="_blank" >EF16_025/0007293: Modulární platforma pro autonomní podvozky specializovaných elektrovozidel pro dopravu nákladu a zařízení</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Access

ISSN

2169-3536

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

12655-12661

Kód UT WoS článku

000525409100066

EID výsledku v databázi Scopus

2-s2.0-85078802367