Improvement of luminescence properties of n-GaN using TEGa precursor

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F20%3A00010358" target="_blank" >RIV/46747885:24220/20:00010358 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/20:00533199 RIV/00216208:11320/20:10423674

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0022024819305986?via=ihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022024819305986?via=ihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2019.125383" target="_blank" >10.1016/j.jcrysgro.2019.125383</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Improvement of luminescence properties of n-GaN using TEGa precursor

Popis výsledku v původním jazyce

The aim of this work is to compare and improve optical and structural properties of GaN layers prepared using TMGa or TEGa precursors. MOVPE grown GaN buffer layers on sapphire substrates are usually grown from TMGa precursor at the temperatures above 1000 degrees C. These layers contain deep and shallow acceptor levels which are responsible for blue and yellow defect bands in luminescent spectra. Both defect bands are detrimental for all major nitride device applications. Especially n-doped GaN layers suffer from strong yellow defect bands. In this work, it is shown that yellow band photoluminescence intensity can be suppressed by using TEGa precursor during the growth of n-doped GaN layers. Different kinds of growth parameters, such as growth temperature or growth rate, have been studied. It is also shown that the change of carrier gas (H-2 or N-2) has very strong influence on the layer quality. H-2 carrier gas increased intensity of yellow band in sample grown from TEGa precursor while N-2 carrier gas had the same effect for sample grown from TMGa precursor. Variable energy positron annihilation spectroscopy showed creation of single V-Ga in H-2 atmosphere and clustering of V-Ga to big complexes ((V-Ga)(3)(V-N)(n)) in N-2 atmosphere.

Název v anglickém jazyce

Improvement of luminescence properties of n-GaN using TEGa precursor

Popis výsledku anglicky

The aim of this work is to compare and improve optical and structural properties of GaN layers prepared using TMGa or TEGa precursors. MOVPE grown GaN buffer layers on sapphire substrates are usually grown from TMGa precursor at the temperatures above 1000 degrees C. These layers contain deep and shallow acceptor levels which are responsible for blue and yellow defect bands in luminescent spectra. Both defect bands are detrimental for all major nitride device applications. Especially n-doped GaN layers suffer from strong yellow defect bands. In this work, it is shown that yellow band photoluminescence intensity can be suppressed by using TEGa precursor during the growth of n-doped GaN layers. Different kinds of growth parameters, such as growth temperature or growth rate, have been studied. It is also shown that the change of carrier gas (H-2 or N-2) has very strong influence on the layer quality. H-2 carrier gas increased intensity of yellow band in sample grown from TEGa precursor while N-2 carrier gas had the same effect for sample grown from TMGa precursor. Variable energy positron annihilation spectroscopy showed creation of single V-Ga in H-2 atmosphere and clustering of V-Ga to big complexes ((V-Ga)(3)(V-N)(n)) in N-2 atmosphere.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20500 - Materials engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

531

Číslo periodika v rámci svazku

FEB

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

—

Kód UT WoS článku

000504205900023

EID výsledku v databázi Scopus

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