Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00562801" target="_blank" >RIV/68378271:_____/22:00562801 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/22:10455500

Výsledek na webu

<a href="https://hdl.handle.net/11104/0334994" target="_blank" >https://hdl.handle.net/11104/0334994</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3390/ma15196916" target="_blank" >10.3390/ma15196916</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers

Popis výsledku v původním jazyce

A set of GaN layers prepared by MOVPE under different technological conditions were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN layer properties, and the concentration of Ga vacancies (VGa). In case of TEGa precursor, the formation of VGa was significantly influenced by the type of reactor atmosphere N2 or H2, while no similar behaviour was observed for TMGa. VGa formation was suppressed with increasing temperature for growth from TEGa. PL results show that yellow band luminescence in GaN is likely not connected with VGa, additionally, increased VGa concentration enhances excitonic luminescence. The probable explanation is that VGa prevent the formation of some other highly efficient nonradiative defects. Possible types of such defects are suggested.

Název v anglickém jazyce

Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers

Popis výsledku anglicky

A set of GaN layers prepared by MOVPE under different technological conditions were investigated using variable energy positron annihilation spectroscopy (VEPAS) to find a link between technological conditions, GaN layer properties, and the concentration of Ga vacancies (VGa). In case of TEGa precursor, the formation of VGa was significantly influenced by the type of reactor atmosphere N2 or H2, while no similar behaviour was observed for TMGa. VGa formation was suppressed with increasing temperature for growth from TEGa. PL results show that yellow band luminescence in GaN is likely not connected with VGa, additionally, increased VGa concentration enhances excitonic luminescence. The probable explanation is that VGa prevent the formation of some other highly efficient nonradiative defects. Possible types of such defects are suggested.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials

ISSN

1996-1944

e-ISSN

1996-1944

Svazek periodika

15

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

CH - Švýcarská konfederace

Počet stran výsledku

13

Strana od-do

6916

Kód UT WoS článku

000867125200001

EID výsledku v databázi Scopus

2-s2.0-85139908156