Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F22%3A00567935" target="_blank" >RIV/68378271:_____/22:00567935 - isvavai.cz</a>

Výsledek na webu

<a href="https://event.mostwiedzy.pl/event/2/attachments/52/145/PCCG_Abstract_book_updated.pdf" target="_blank" >https://event.mostwiedzy.pl/event/2/attachments/52/145/PCCG_Abstract_book_updated.pdf</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects

Popis výsledku v původním jazyce

Defects related to gallium vacancies (VGa) were studied in a set of GaN samples prepared by MOVPE under different technological conditions by Variable energy positron annihilation spectroscopy VEPAS. Different correlations between layers grown from TMGa and TEGa were observed. Increased VGa concentration enhances excitonic luminescence, probably VGa prevents formation of some other highly efficient nonradiative defect. Anticorrelation between VGa formation and carbon contamination was also observed.

Název v anglickém jazyce

Ga vacancies in MOVPE prepared GaN layers - correlation with other point defects

Popis výsledku anglicky

Defects related to gallium vacancies (VGa) were studied in a set of GaN samples prepared by MOVPE under different technological conditions by Variable energy positron annihilation spectroscopy VEPAS. Different correlations between layers grown from TMGa and TEGa were observed. Increased VGa concentration enhances excitonic luminescence, probably VGa prevents formation of some other highly efficient nonradiative defect. Anticorrelation between VGa formation and carbon contamination was also observed.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF16_019%2F0000760" target="_blank" >EF16_019/0000760: Fyzika pevných látek pro 21. století</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů