Effect of CoSi2 interfacial layer on the magnetic properties of Si CoSi2 Sm-Co thin films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24620%2F20%3A00006820" target="_blank" >RIV/46747885:24620/20:00006820 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0304885319300344" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0304885319300344</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jmmm.2019.165716" target="_blank" >10.1016/j.jmmm.2019.165716</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of CoSi2 interfacial layer on the magnetic properties of Si CoSi2 Sm-Co thin films

Popis výsledku v původním jazyce

Magnetic thin films with a layer sequence of Si vertical bar CoSi2 vertical bar Sm-Co were grown by direct sputter deposition at elevated temperatures, through interfacial diffusion between Si (1 0 0) substrate and the overlying Sm-Co layer. HR-TEM analysis revealed the occurrence of CoSi2 -interfacial layer close to the Si-substrate surface, with controllable thicknesses of similar to 20 and 35 nm at deposition temperatures: 450 and 500 degrees C, respectively. XRD studies confirmed the crystallization of Sm2Co17 and SmCo5 magnetic phases accompanied by the other phases such as CoSi2 and SmCoSi2 due to the intermixing of Co and Si-atoms at higher deposition temperatures. The measured coercivity values are found to be increased from 8.7 to 11.6 kOe at higher CoSi2-layer thickness. The angular-dependent hysteresis measurements demonstrated a distinct isotropic and uniaxial magnetic anisotropy characteristics for the Sm-Co films consisting of 35 and 20-nm thick CoSi2 interfacial layers, respectively and the associated magnetization reversal mechanisms are discussed using the Stoner-Wohlfarth model. The temperature coefficients of remanence (alpha) and coercivity (beta) were determined from the temperature-dependent hysteresis curves. The Sm-Co films consisting of 35-nm thick CoSi2-layer exhibited a better thermal stability with 'alpha' and 'beta' values of 0.35 /- 0.05%/degrees C and -0.13 /- 0.02%/degrees C, respectively. The results of present study provide splendid opportunities for exploiting the potential of CoSi2 as an under layer, for growing the Sm-Co films towards high-temperature applications.

Název v anglickém jazyce

Effect of CoSi2 interfacial layer on the magnetic properties of Si CoSi2 Sm-Co thin films

Popis výsledku anglicky

Magnetic thin films with a layer sequence of Si vertical bar CoSi2 vertical bar Sm-Co were grown by direct sputter deposition at elevated temperatures, through interfacial diffusion between Si (1 0 0) substrate and the overlying Sm-Co layer. HR-TEM analysis revealed the occurrence of CoSi2 -interfacial layer close to the Si-substrate surface, with controllable thicknesses of similar to 20 and 35 nm at deposition temperatures: 450 and 500 degrees C, respectively. XRD studies confirmed the crystallization of Sm2Co17 and SmCo5 magnetic phases accompanied by the other phases such as CoSi2 and SmCoSi2 due to the intermixing of Co and Si-atoms at higher deposition temperatures. The measured coercivity values are found to be increased from 8.7 to 11.6 kOe at higher CoSi2-layer thickness. The angular-dependent hysteresis measurements demonstrated a distinct isotropic and uniaxial magnetic anisotropy characteristics for the Sm-Co films consisting of 35 and 20-nm thick CoSi2 interfacial layers, respectively and the associated magnetization reversal mechanisms are discussed using the Stoner-Wohlfarth model. The temperature coefficients of remanence (alpha) and coercivity (beta) were determined from the temperature-dependent hysteresis curves. The Sm-Co films consisting of 35-nm thick CoSi2-layer exhibited a better thermal stability with 'alpha' and 'beta' values of 0.35 /- 0.05%/degrees C and -0.13 /- 0.02%/degrees C, respectively. The results of present study provide splendid opportunities for exploiting the potential of CoSi2 as an under layer, for growing the Sm-Co films towards high-temperature applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Magnetism and Magnetic Materials

ISSN

0304-8853

e-ISSN

—

Svazek periodika

493

Číslo periodika v rámci svazku

January

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

—

Kód UT WoS článku

000486397800032

EID výsledku v databázi Scopus

2-s2.0-85071125521