The ITO thin films deposited by magnetron sputtering for solar cell applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24620%2F24%3A00012493" target="_blank" >RIV/46747885:24620/24:00012493 - isvavai.cz</a>

Výsledek na webu

<a href="https://journals.pan.pl/dlibra/publication/150803/edition/131949/content" target="_blank" >https://journals.pan.pl/dlibra/publication/150803/edition/131949/content</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.24425/bpasts.2024.150803" target="_blank" >10.24425/bpasts.2024.150803</a>

Jazyk výsledku

angličtina

Název v původním jazyce

The ITO thin films deposited by magnetron sputtering for solar cell applications

Popis výsledku v původním jazyce

The paper presents the results of research on the surface topography and electrical properties of ITO thin films deposited by PVD for applications in silicon photovoltaic cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness and optical constants were measured using a spectroscopic ellipsometer. To compare the impact of the preparation process on the properties of layers, deposition was carried out with three different temperatures: 25, 200 and 400°C. As the temperature increased, the surface roughness changed, which correlated with the results of structural tests. The crystallite size increased from 11 to 46 nm. This, in turn, reduced the surface resistance. The electrical properties were measured using a four-point probe method and then the prepared solar cells containing ITO thin films in their structure were examined. By controlling the deposition parameters, the surface resistance of the deposited layer and the efficiency of the prepared solar cells (18.91%) were optimized. Currently, ITO has the best properties for use in optoelectronics and photovoltaics in among the known TCO layers. The magnetron sputtering method is widely used in many industries. Therefore, the authors predict that TCO layers can replace currently used antireflection layers and reduce the numberand dimensions of front metal contacts in solar cells.

Název v anglickém jazyce

The ITO thin films deposited by magnetron sputtering for solar cell applications

Popis výsledku anglicky

The paper presents the results of research on the surface topography and electrical properties of ITO thin films deposited by PVD for applications in silicon photovoltaic cells. The surface condition and chemical composition were characterized using a scanning electron microscope and the thickness and optical constants were measured using a spectroscopic ellipsometer. To compare the impact of the preparation process on the properties of layers, deposition was carried out with three different temperatures: 25, 200 and 400°C. As the temperature increased, the surface roughness changed, which correlated with the results of structural tests. The crystallite size increased from 11 to 46 nm. This, in turn, reduced the surface resistance. The electrical properties were measured using a four-point probe method and then the prepared solar cells containing ITO thin films in their structure were examined. By controlling the deposition parameters, the surface resistance of the deposited layer and the efficiency of the prepared solar cells (18.91%) were optimized. Currently, ITO has the best properties for use in optoelectronics and photovoltaics in among the known TCO layers. The magnetron sputtering method is widely used in many industries. Therefore, the authors predict that TCO layers can replace currently used antireflection layers and reduce the numberand dimensions of front metal contacts in solar cells.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

21100 - Other engineering and technologies

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

BULLETIN OF THE POLISH ACADEMY OF SCIENCES-TECHNICAL SCIENCES

ISSN

0239-7528

e-ISSN

—

Svazek periodika

72

Číslo periodika v rámci svazku

5

Stát vydavatele periodika

PL - Polská republika

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

001410612000008

EID výsledku v databázi Scopus

2-s2.0-85204771785