Tuning the rear side morphology of crystalline silicon solar cells by plasma chemical etching at atmospheric pressure for maximal light trapping effect

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49610040%3A_____%2F11%3A%230000014" target="_blank" >RIV/49610040:_____/11:#0000014 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Tuning the rear side morphology of crystalline silicon solar cells by plasma chemical etching at atmospheric pressure for maximal light trapping effect

Popis výsledku v původním jazyce

Optical properties of textured monocrystalline silicon substrates after single side atmospheric pressure plasma chemical etching (APPCE) were studied in dependence on the treatment conditions in the SF6-O2 gas mixture. This treatment leads to the surfacemorphology modification, namely to the controlled change of top angles of random pyramids from original 70.5° to resulting 90-150°. Influence of the one side morphology modification of silicon wafers on the resulting optical spectra was calculated by Monte Carlo modeling as well as it was measured by combined T/R characterization. The same modeling approach has been applied to predict the light trapping behavior of solar cell structures with dielectric passivation of the rear side which confirms the increase of the internal reflectivity of c-Si solar cell structure from values of about 65-70% for standard screen-printed Al to well over 90%. Rear side morphology modification (by two various APPCE methods) was applied for the set of c-Si

Název v anglickém jazyce

Tuning the rear side morphology of crystalline silicon solar cells by plasma chemical etching at atmospheric pressure for maximal light trapping effect

Popis výsledku anglicky

Optical properties of textured monocrystalline silicon substrates after single side atmospheric pressure plasma chemical etching (APPCE) were studied in dependence on the treatment conditions in the SF6-O2 gas mixture. This treatment leads to the surfacemorphology modification, namely to the controlled change of top angles of random pyramids from original 70.5° to resulting 90-150°. Influence of the one side morphology modification of silicon wafers on the resulting optical spectra was calculated by Monte Carlo modeling as well as it was measured by combined T/R characterization. The same modeling approach has been applied to predict the light trapping behavior of solar cell structures with dielectric passivation of the rear side which confirms the increase of the internal reflectivity of c-Si solar cell structure from values of about 65-70% for standard screen-printed Al to well over 90%. Rear side morphology modification (by two various APPCE methods) was applied for the set of c-Si

Druh

D - Stať ve sborníku

CEP obor

BL - Fyzika plasmatu a výboje v plynech

OECD FORD obor

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Projekt

<a href="/cs/project/FR-TI1%2F168" target="_blank" >FR-TI1/168: Barevné solární články s vysokou účinností pro architektonické aplikace</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings: 26th European Photovoltaic Solar Energy Conference and Exhibition

ISBN

3-936338-27-2

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

1542-1546

Název nakladatele

WIP

Místo vydání

Munchen

Místo konání akce

Hamburg

Datum konání akce

5. 9. 2011

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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