Amorphous/crystalline silicon interface stability: correlation between infrared spectroscopy and electronic passivation properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536301" target="_blank" >RIV/68378271:_____/20:00536301 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/20:00342290

Výsledek na webu

<a href="https://doi.org/10.1002/admi.202000957" target="_blank" >https://doi.org/10.1002/admi.202000957</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/admi.202000957" target="_blank" >10.1002/admi.202000957</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Amorphous/crystalline silicon interface stability: correlation between infrared spectroscopy and electronic passivation properties

Popis výsledku v původním jazyce

Ultrathin layers of hydrogenated amorphous silicon (a‐Si:H), passivating the surface of crystalline silicon (c‐Si), are key enablers for high‐efficiency silicon heterojunction solar cells. In this work, the authors apply highly sensitive attenuated total reflectance Fourier‐transform infrared spectroscopy, combined with carrier‐lifetime measurements and carrier‐lifetime imaging. To gain insight, the a‐Si:H/c‐Si interfacial morphology is intentionally manipulated by applying different surface, annealing and ageing treatments. Changes are observed in the vibrational modes of hydrides (SiHX), oxides (SiHX(SiYOZ)) together with hydroxyl and hydrocarbon surface groups. The effect of unintentional oxidation and contamination is considered as well. Electronic interfacial properties are reviewed and discussed from the point of hydrogen mono‐layer passivation of the c‐Si surface and from the perspectives of a‐Si:H bulk properties.

Název v anglickém jazyce

Amorphous/crystalline silicon interface stability: correlation between infrared spectroscopy and electronic passivation properties

Popis výsledku anglicky

Ultrathin layers of hydrogenated amorphous silicon (a‐Si:H), passivating the surface of crystalline silicon (c‐Si), are key enablers for high‐efficiency silicon heterojunction solar cells. In this work, the authors apply highly sensitive attenuated total reflectance Fourier‐transform infrared spectroscopy, combined with carrier‐lifetime measurements and carrier‐lifetime imaging. To gain insight, the a‐Si:H/c‐Si interfacial morphology is intentionally manipulated by applying different surface, annealing and ageing treatments. Changes are observed in the vibrational modes of hydrides (SiHX), oxides (SiHX(SiYOZ)) together with hydroxyl and hydrocarbon surface groups. The effect of unintentional oxidation and contamination is considered as well. Electronic interfacial properties are reviewed and discussed from the point of hydrogen mono‐layer passivation of the c‐Si surface and from the perspectives of a‐Si:H bulk properties.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Materials Interfaces

ISSN

2196-7350

e-ISSN

—

Svazek periodika

7

Číslo periodika v rámci svazku

20

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

7

Strana od-do

1-7

Kód UT WoS článku

000562764400001

EID výsledku v databázi Scopus

2-s2.0-85089867676