Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F20%3A43956871" target="_blank" >RIV/49777513:23640/20:43956871 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11025/36633" target="_blank" >http://hdl.handle.net/11025/36633</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssr.201900087" target="_blank" >10.1002/pssr.201900087</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Popis výsledku v původním jazyce

Solar cells based on black silicon (b-Si) are proven to be promising in photovoltaics (PVs) by exceeding 22%efficiency. To reach high efficiencies with b-Si surfaces, the most crucial step is the effective surface passivation. Up to now, the highest effective minority carrier lifetimes are achieved with atomic layer-deposited Al2O3 or thermal SiO2. Plasmaenhanced chemical vapor deposition (PECVD)-grown hydrogenated amorphous silicon (a-Si:H) passivation of b-Si is seldom reported due to conformality problems. In this current study, b-Si surfaces superposed on standard pyramidal textures, also known as modulated surface textures (MSTs), are successfully passivated by PECVD-grown conformal layers of a-Si:H. It is shown that under proper plasma-processing conditions, the effective minority carrier lifetimes of samples endowed with front MST and rear standard pyramidal textures can reach up to 2.3 ms. A route to the conformal growth is described and developed by transmission electron microscopic (TEM) images. Passivated MST samples exhibit less than 4% reflection in a wide spectral range from 430 to 1020 nm.

Název v anglickém jazyce

Effective Passivation of Black Silicon Surfaces via Plasma-Enhanced Chemical Vapor Deposition Grown Conformal Hydrogenated Amorphous Silicon Layer

Popis výsledku anglicky

Solar cells based on black silicon (b-Si) are proven to be promising in photovoltaics (PVs) by exceeding 22%efficiency. To reach high efficiencies with b-Si surfaces, the most crucial step is the effective surface passivation. Up to now, the highest effective minority carrier lifetimes are achieved with atomic layer-deposited Al2O3 or thermal SiO2. Plasmaenhanced chemical vapor deposition (PECVD)-grown hydrogenated amorphous silicon (a-Si:H) passivation of b-Si is seldom reported due to conformality problems. In this current study, b-Si surfaces superposed on standard pyramidal textures, also known as modulated surface textures (MSTs), are successfully passivated by PECVD-grown conformal layers of a-Si:H. It is shown that under proper plasma-processing conditions, the effective minority carrier lifetimes of samples endowed with front MST and rear standard pyramidal textures can reach up to 2.3 ms. A route to the conformal growth is described and developed by transmission electron microscopic (TEM) images. Passivated MST samples exhibit less than 4% reflection in a wide spectral range from 430 to 1020 nm.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi-Rapid Research Letters

ISSN

1862-6254

e-ISSN

—

Svazek periodika

14

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

7

Strana od-do

—

Kód UT WoS článku

000492043900001

EID výsledku v databázi Scopus

2-s2.0-85074585368