Relation between optical and microscopic properties of hydrogenated silicon thin films with integrated germanium and tin nanoparticles

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00522709" target="_blank" >RIV/68378271:_____/19:00522709 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985858:_____/19:00522709

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Relation between optical and microscopic properties of hydrogenated silicon thin films with integrated germanium and tin nanoparticles

Popis výsledku v původním jazyce

The hydrogenated amorphous silicon layers (a-Si:H) were deposited by PECVD method on quartz substrates. During interruption of PECVD process the vacuum chamber was pumped up to 10-5 Pa and 1 nm thin films of Germanium or Tin were evaporated on the surface. The materials form isolated nanoparticles (NPs) on the a-Si:H surface. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated 5 times. The a-Si:H thin films with integrated Ge or Sn NPs were characterized optically by PDS and CPM methods, and microscopically by SEM and AFM microscopies. Optical and microscopic properties of the structures are correlated and discussed considering their application in photovoltaics.n

Název v anglickém jazyce

Relation between optical and microscopic properties of hydrogenated silicon thin films with integrated germanium and tin nanoparticles

Popis výsledku anglicky

The hydrogenated amorphous silicon layers (a-Si:H) were deposited by PECVD method on quartz substrates. During interruption of PECVD process the vacuum chamber was pumped up to 10-5 Pa and 1 nm thin films of Germanium or Tin were evaporated on the surface. The materials form isolated nanoparticles (NPs) on the a-Si:H surface. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes were alternated 5 times. The a-Si:H thin films with integrated Ge or Sn NPs were characterized optically by PDS and CPM methods, and microscopically by SEM and AFM microscopies. Optical and microscopic properties of the structures are correlated and discussed considering their application in photovoltaics.n

Druh

D - Stať ve sborníku

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./

ISBN

978-80-87294-89-5

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

83-87

Název nakladatele

Tanger Ltd.

Místo vydání

Ostrava

Místo konání akce

Brno

Datum konání akce

17. 10. 2018

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

000513131900014