Experimental validation of IGBT thermal impedances from voltage-based and direct temperature measurements

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F16%3A43929828" target="_blank" >RIV/49777513:23220/16:43929828 - isvavai.cz</a>

Výsledek na webu

<a href="http://ieeexplore.ieee.org/document/7793673/" target="_blank" >http://ieeexplore.ieee.org/document/7793673/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/IECON.2016.7793673" target="_blank" >10.1109/IECON.2016.7793673</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Experimental validation of IGBT thermal impedances from voltage-based and direct temperature measurements

Popis výsledku v původním jazyce

Temperature measurement on IGBT modules using voltage-based, direct and infrared methods is presented. The measured temperatures from all three methods are used in determining thermal impedances of IGBT and diodes for air cooled IGBT modules at different air flowrates. Thermal impedances for both active and passive switching elements are measured and the corresponding Foster network is established. The measured temperature and corresponding thermal impedances calculated from measured temperatures using the direct and voltage-based temperature measurement approach are validated using infrared temperature measurements and corresponding thermal impedances calculated from infrared measured temperatures. Finally, thermal impedances calculated from maximum measured IGBT and diode temperatures are compared to those obtained from measured average IGBT and diode temperatures.

Název v anglickém jazyce

Experimental validation of IGBT thermal impedances from voltage-based and direct temperature measurements

Popis výsledku anglicky

Temperature measurement on IGBT modules using voltage-based, direct and infrared methods is presented. The measured temperatures from all three methods are used in determining thermal impedances of IGBT and diodes for air cooled IGBT modules at different air flowrates. Thermal impedances for both active and passive switching elements are measured and the corresponding Foster network is established. The measured temperature and corresponding thermal impedances calculated from measured temperatures using the direct and voltage-based temperature measurement approach are validated using infrared temperature measurements and corresponding thermal impedances calculated from infrared measured temperatures. Finally, thermal impedances calculated from maximum measured IGBT and diode temperatures are compared to those obtained from measured average IGBT and diode temperatures.

Druh

D - Stať ve sborníku

CEP obor

JA - Elektronika a optoelektronika, elektrotechnika

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0094" target="_blank" >ED2.1.00/03.0094: Regionální inovační centrum elektrotechniky (RICE)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the IECON 2016 : 42nd Annual Conference of the IEEE Industrial Electronics Society

ISBN

978-1-5090-3474-1

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

3396-3401

Název nakladatele

IEEE

Místo vydání

Piscataway

Místo konání akce

Florence, Italy

Datum konání akce

24. 10. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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