Detector response and performance of a 500 μm thick GaAs attached to Timepix3 in relativistic particle beams

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F20%3A43960199" target="_blank" >RIV/49777513:23220/20:43960199 - isvavai.cz</a>

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1748-0221/15/03/C03013/meta" target="_blank" >https://iopscience.iop.org/article/10.1088/1748-0221/15/03/C03013/meta</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/15/03/C03013" target="_blank" >10.1088/1748-0221/15/03/C03013</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Detector response and performance of a 500 μm thick GaAs attached to Timepix3 in relativistic particle beams

Popis výsledku v původním jazyce

The performance and response of a Timepix3 detector with a 500 μm thick GaAs:Cr sensor layer was investigated in different radiation fields. The sensor resistivity was ρ 109 Ω cm. Fitting different modified Hecht functions, which take the small pixel effect into account, the mobility-lifetime products of μeτe = (0.773 ± 0.018) × 10-4 cm2V-1 and μeτe = (0.996 ± 0.056) × 10-4 cm2V-1 were determined. Hereby, the latter value is favored due to the better agreement of fit and data. In a measurement in a 40 GeV/c pion beam, the drift times and charge collection efficiencies were studied as a function of the interaction depth. We present the measured drift velocity as a function of the electric field strength and compare the determined dependence with a model. In a measurement in a mixed ion beam, we study the capability of the detector to separate different ion species. We show the detector response in the form of tracks and discuss heavy ion track features. © 2020 IOP Publishing Ltd and Sissa Medialab.

Název v anglickém jazyce

Detector response and performance of a 500 μm thick GaAs attached to Timepix3 in relativistic particle beams

Popis výsledku anglicky

The performance and response of a Timepix3 detector with a 500 μm thick GaAs:Cr sensor layer was investigated in different radiation fields. The sensor resistivity was ρ 109 Ω cm. Fitting different modified Hecht functions, which take the small pixel effect into account, the mobility-lifetime products of μeτe = (0.773 ± 0.018) × 10-4 cm2V-1 and μeτe = (0.996 ± 0.056) × 10-4 cm2V-1 were determined. Hereby, the latter value is favored due to the better agreement of fit and data. In a measurement in a 40 GeV/c pion beam, the drift times and charge collection efficiencies were studied as a function of the interaction depth. We present the measured drift velocity as a function of the electric field strength and compare the determined dependence with a model. In a measurement in a mixed ion beam, we study the capability of the detector to separate different ion species. We show the detector response in the form of tracks and discuss heavy ion track features. © 2020 IOP Publishing Ltd and Sissa Medialab.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/EF16_019%2F0000766" target="_blank" >EF16_019/0000766: Inženýrské aplikace fyziky mikrosvěta</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

—

Svazek periodika

15

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

14

Strana od-do

0-13

Kód UT WoS článku

000528039600013

EID výsledku v databázi Scopus

2-s2.0-85084192611