Detector response and performance of a 500 mu m thick GaAs attached to Timepix3 in relativistic particle beams
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F20%3A00341383" target="_blank" >RIV/68407700:21670/20:00341383 - isvavai.cz</a>
Výsledek na webu
<a href="https://doi.org/10.1088/1748-0221/15/03/C03013" target="_blank" >https://doi.org/10.1088/1748-0221/15/03/C03013</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1088/1748-0221/15/03/C03013" target="_blank" >10.1088/1748-0221/15/03/C03013</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Detector response and performance of a 500 mu m thick GaAs attached to Timepix3 in relativistic particle beams
Popis výsledku v původním jazyce
The performance and response of a Timepix3 detector with a 500 mu m thick GaAs:Cr sensor layer was investigated in different radiation fields. The sensor resistivity was rho approximate to 10(9) Omega cm. Fitting different modified Hecht functions, which take the small pixel effect into account, the mobility-lifetime products of mu(e)tau(e) = (0.773 +/- 0.018 degrees) x 10-4 cm(2)V(-1) and mu(e)tau(e) = (0.996 +/- 0.056) x 10(-4) cm(2)V(-1) were determined. Hereby, the latter value is favored due to the better agreement of fit and data. In a measurement in a 40 GeV/c pion beam, the drift times and charge collection efficiencies were studied as a function of the interaction depth. We present the measured drift velocity as a function of the electric field strength and compare the determined dependence with a model. In a measurement in a mixed ion beam, we study the capability of the detector to separate different ion species. We show the detector response in the form of tracks and discuss heavy ion track features.
Název v anglickém jazyce
Detector response and performance of a 500 mu m thick GaAs attached to Timepix3 in relativistic particle beams
Popis výsledku anglicky
The performance and response of a Timepix3 detector with a 500 mu m thick GaAs:Cr sensor layer was investigated in different radiation fields. The sensor resistivity was rho approximate to 10(9) Omega cm. Fitting different modified Hecht functions, which take the small pixel effect into account, the mobility-lifetime products of mu(e)tau(e) = (0.773 +/- 0.018 degrees) x 10-4 cm(2)V(-1) and mu(e)tau(e) = (0.996 +/- 0.056) x 10(-4) cm(2)V(-1) were determined. Hereby, the latter value is favored due to the better agreement of fit and data. In a measurement in a 40 GeV/c pion beam, the drift times and charge collection efficiencies were studied as a function of the interaction depth. We present the measured drift velocity as a function of the electric field strength and compare the determined dependence with a model. In a measurement in a mixed ion beam, we study the capability of the detector to separate different ion species. We show the detector response in the form of tracks and discuss heavy ion track features.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
10303 - Particles and field physics
Návaznosti výsledku
Projekt
<a href="/cs/project/EF16_019%2F0000766" target="_blank" >EF16_019/0000766: Inženýrské aplikace fyziky mikrosvěta</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2020
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Instrumentation
ISSN
1748-0221
e-ISSN
1748-0221
Svazek periodika
15
Číslo periodika v rámci svazku
3
Stát vydavatele periodika
IT - Italská republika
Počet stran výsledku
14
Strana od-do
—
Kód UT WoS článku
000528039600013
EID výsledku v databázi Scopus
2-s2.0-85084192611