Improvement of parameters of micro-pixel avalanche photodiodes

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23220%2F22%3A43967530" target="_blank" >RIV/49777513:23220/22:43967530 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21670/22:00363576

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1748-0221/17/07/P07021" target="_blank" >https://iopscience.iop.org/article/10.1088/1748-0221/17/07/P07021</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/17/07/P07021" target="_blank" >10.1088/1748-0221/17/07/P07021</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Improvement of parameters of micro-pixel avalanche photodiodes

Popis výsledku v původním jazyce

The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years. © 2022 IOP Publishing Ltd and Sissa Medialab.

Název v anglickém jazyce

Improvement of parameters of micro-pixel avalanche photodiodes

Popis výsledku anglicky

The paper is concerned with the parameter study of a new generation of micro-pixel avalanche photodiodes (MAPD) with deeply buried pixel structure, also named silicon photomultipliers (SiPM) or multi-pixel photon counter (MPPC). The new MAPD of type MAPD-3NM was manufactured in the frame of collaboration with Zecotek Company. Measurements were carried out and discussed in terms of the important parameters such as the current-voltage and capacitance-voltage characteristic, gain, the temperature coefficient of breakdown voltage, breakdown voltage, and gamma-ray detection performance using an LFS scintillator. The obtained results showed that the newly developed MAPD-3NM photodiode outperformed the previous generation in most parameters and can be successfully applied in space application, medicine, high-energy physics, and security. New proposals are also discussed, for further improvement of the parameters of the MAPD photodiodes that will be produced in the coming years. © 2022 IOP Publishing Ltd and Sissa Medialab.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/LTT18021" target="_blank" >LTT18021: Spolupráce ČR s SÚJV Dubna v teoretické a jaderné fyzice a při využití jaderných metod v dalších oborech</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

1748-0221

Svazek periodika

17

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

16

Strana od-do

nestrankovano

Kód UT WoS článku

000867442500003

EID výsledku v databázi Scopus

2-s2.0-85134753358