Nanostructured WO3 based bilayer thin films for hydrogen gas sensing

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Nanostructured WO3 based bilayer thin films for hydrogen gas sensing

Popis výsledku v původním jazyce

In this study we demonstrate the advantages of two advanced sputtering techniques for preparation of thin film conductometric gas sensor. We combined tungsten trioxide (WO3) thin films prepared by conventional reactive dc sputtering with (i) cupric oxide (CuO) nanoclusters deposited by gas aggregation cluster source (GAS) and (ii) with nanostructured copper tungstate (CuWO4) layer prepared by reactive rf sputtering. Both approaches enabled us to synthetize nanostructures with an enhanced conductometric sensorial response in comparison with WO3 film alone. The enhanced response is explained by forming of nanosized electronic junctions. In case of CuO nanocluster, the p-n junction is formed, CuO is p-type semiconductor, WO3 is n-type. The copper tungstate is n-type and so hetero n-n junction is formed. Presented techniques creates nanostructured sensing material without need of any wet process-steps nor sintering. This makes them suitable choices for integrating of nanostructured hydrogen sensors with microcircuits.

Název v anglickém jazyce

Nanostructured WO3 based bilayer thin films for hydrogen gas sensing

Popis výsledku anglicky

In this study we demonstrate the advantages of two advanced sputtering techniques for preparation of thin film conductometric gas sensor. We combined tungsten trioxide (WO3) thin films prepared by conventional reactive dc sputtering with (i) cupric oxide (CuO) nanoclusters deposited by gas aggregation cluster source (GAS) and (ii) with nanostructured copper tungstate (CuWO4) layer prepared by reactive rf sputtering. Both approaches enabled us to synthetize nanostructures with an enhanced conductometric sensorial response in comparison with WO3 film alone. The enhanced response is explained by forming of nanosized electronic junctions. In case of CuO nanocluster, the p-n junction is formed, CuO is p-type semiconductor, WO3 is n-type. The copper tungstate is n-type and so hetero n-n junction is formed. Presented techniques creates nanostructured sensing material without need of any wet process-steps nor sintering. This makes them suitable choices for integrating of nanostructured hydrogen sensors with microcircuits.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

20506 - Coating and films

Projekt

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Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů