Effect of positive pulse voltage in bipolar reactive HiPIMS on crystal structure, microstructure and mechanical properties of CrN films

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F20%3A43960222" target="_blank" >RIV/49777513:23520/20:43960222 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/49777513:23520/21:43963209

Výsledek na webu

—

DOI - Digital Object Identifier

—

Jazyk výsledku

angličtina

Název v původním jazyce

Effect of positive pulse voltage in bipolar reactive HiPIMS on crystal structure, microstructure and mechanical properties of CrN films

Popis výsledku v původním jazyce

In this work, we first use a substrate holder at a floating potential to demonstrate that bipolar HiPIMS cannot be used instead of a DC substrate bias voltage for deposition of non-conductive films or deposition onto non-conductive substrates, due to charging and the loss of a plasma-substrate potential difference, necessary for ion acceleration. However, when the substrate holder is grounded, there is an apparent evolution in crystal structure, microstructure and mechanical properties of the CrN films with increasing positive pulse voltage. We compare the effect of the positive pulse voltage in bipolar HiPIMS with the effect of a standard DC bias voltage applied to the substrate holder in unipolar HiPIMS. We find that the effects are different, mainly due to differences in energies delivered into the growing film by bombarding ions. The most interesting properties, namely high hardness (23.5 and 23.1 Pa) at a relatively low residual stress are achieved for films prepared using bipolar HiPIMS with a grounded substrate holder at positive pulse voltages of 90 and 120 V, respectively.

Název v anglickém jazyce

Effect of positive pulse voltage in bipolar reactive HiPIMS on crystal structure, microstructure and mechanical properties of CrN films

Popis výsledku anglicky

In this work, we first use a substrate holder at a floating potential to demonstrate that bipolar HiPIMS cannot be used instead of a DC substrate bias voltage for deposition of non-conductive films or deposition onto non-conductive substrates, due to charging and the loss of a plasma-substrate potential difference, necessary for ion acceleration. However, when the substrate holder is grounded, there is an apparent evolution in crystal structure, microstructure and mechanical properties of the CrN films with increasing positive pulse voltage. We compare the effect of the positive pulse voltage in bipolar HiPIMS with the effect of a standard DC bias voltage applied to the substrate holder in unipolar HiPIMS. We find that the effects are different, mainly due to differences in energies delivered into the growing film by bombarding ions. The most interesting properties, namely high hardness (23.5 and 23.1 Pa) at a relatively low residual stress are achieved for films prepared using bipolar HiPIMS with a grounded substrate holder at positive pulse voltages of 90 and 120 V, respectively.

Druh

O - Ostatní výsledky

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů