Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf‒B‒Si‒Y/Ho‒C‒N films up to 1500 °C

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43970433" target="_blank" >RIV/49777513:23520/24:43970433 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1016/j.matdes.2023.112589" target="_blank" >https://doi.org/10.1016/j.matdes.2023.112589</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matdes.2023.112589" target="_blank" >10.1016/j.matdes.2023.112589</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf‒B‒Si‒Y/Ho‒C‒N films up to 1500 °C

Popis výsledku v původním jazyce

Hard, and optically transparent amorphous Hf‒B‒Si‒Y/Ho‒C‒N films prepared by reactive pulsed dc magnetron co-sputtering were annealed up to 1500 °C in air and studied by combination of X-ray diffraction and transmission electron microscopy with aim to understand the Y- and Ho-doping effects on thermal stability and oxidation behavior. It was found that a three-layered microstructure developed in both annealed films. A fully oxidized layer formed at the top surface of cubic Hf(Y/Ho)O2 nanoparticles embedded in an amorphous SiOx-based matrix. The oxide layer is about 36 % thinner than undoped films with similar composition. A recrystallized structure formed at the bottom of both films composed mainly of Hf(Y/Ho)N and Si3N4. All Hf(Y/Ho)N in the middle layer was oxidized producing vertically oriented Hf(Y/Ho)O2 nanocolumns surrounded by nanocrystalline Si3N4. The Y- and Ho-doping was found to stabilize the cubic oxide structure and promote its (111) columnar texture. The oxidation mechanism of Si3N4 nanodomains occurs via formation of β-SiO2 first followed by its transformation to amorphous SiOx. It is suggested that substituting Hf with Y and Ho ions within the Hf(Y/Ho)O2 formed an anion vacancy defect structure to preserve charge neutrality affecting the oxidation mechanism in the doped films.

Název v anglickém jazyce

Effects of Y and Ho doping on microstructure evolution during oxidation of extraordinary stable Hf‒B‒Si‒Y/Ho‒C‒N films up to 1500 °C

Popis výsledku anglicky

Hard, and optically transparent amorphous Hf‒B‒Si‒Y/Ho‒C‒N films prepared by reactive pulsed dc magnetron co-sputtering were annealed up to 1500 °C in air and studied by combination of X-ray diffraction and transmission electron microscopy with aim to understand the Y- and Ho-doping effects on thermal stability and oxidation behavior. It was found that a three-layered microstructure developed in both annealed films. A fully oxidized layer formed at the top surface of cubic Hf(Y/Ho)O2 nanoparticles embedded in an amorphous SiOx-based matrix. The oxide layer is about 36 % thinner than undoped films with similar composition. A recrystallized structure formed at the bottom of both films composed mainly of Hf(Y/Ho)N and Si3N4. All Hf(Y/Ho)N in the middle layer was oxidized producing vertically oriented Hf(Y/Ho)O2 nanocolumns surrounded by nanocrystalline Si3N4. The Y- and Ho-doping was found to stabilize the cubic oxide structure and promote its (111) columnar texture. The oxidation mechanism of Si3N4 nanodomains occurs via formation of β-SiO2 first followed by its transformation to amorphous SiOx. It is suggested that substituting Hf with Y and Ho ions within the Hf(Y/Ho)O2 formed an anion vacancy defect structure to preserve charge neutrality affecting the oxidation mechanism in the doped films.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20506 - Coating and films

Projekt

<a href="/cs/project/EH22_008%2F0004572" target="_blank" >EH22_008/0004572: Kvantové materiály pro aplikace v udržitelných technologiích</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Materials &amp; Design

ISSN

0264-1275

e-ISSN

1873-4197

Svazek periodika

237

Číslo periodika v rámci svazku

JAN 2024

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

13

Strana od-do

1-13

Kód UT WoS článku

001142585100001

EID výsledku v databázi Scopus

2-s2.0-85180412683