High-rate reactively sputtered Cu2O thin films post-treated with high-power infrared laser
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23520%2F24%3A43973762" target="_blank" >RIV/49777513:23520/24:43973762 - isvavai.cz</a>
Nalezeny alternativní kódy
RIV/49777513:23640/24:43973762
Výsledek na webu
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DOI - Digital Object Identifier
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Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
High-rate reactively sputtered Cu2O thin films post-treated with high-power infrared laser
Popis výsledku v původním jazyce
In this work, we have utilized different approaches to improve the optical and electrical properties of Cu2O-based films. We combined the growth of Cu2O films by high-power impulse magnetron sputtering (HiPIMS) at different pulse-averaged target power densities together with the utilization of a well-established high-power infrared laser. We have systematically studied the effect of laser parameters on the optoelectrical properties of Cu2O thin films, namely electrical conductivity, the concentration of holes and their mobility, optical band gap and microstructure. We have found that this method could be a promising way to enhance the hole mobility in Cu2O-based materials without the requirements of high temperature and/or a special working atmosphere.
Název v anglickém jazyce
High-rate reactively sputtered Cu2O thin films post-treated with high-power infrared laser
Popis výsledku anglicky
In this work, we have utilized different approaches to improve the optical and electrical properties of Cu2O-based films. We combined the growth of Cu2O films by high-power impulse magnetron sputtering (HiPIMS) at different pulse-averaged target power densities together with the utilization of a well-established high-power infrared laser. We have systematically studied the effect of laser parameters on the optoelectrical properties of Cu2O thin films, namely electrical conductivity, the concentration of holes and their mobility, optical band gap and microstructure. We have found that this method could be a promising way to enhance the hole mobility in Cu2O-based materials without the requirements of high temperature and/or a special working atmosphere.
Klasifikace
Druh
O - Ostatní výsledky
CEP obor
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OECD FORD obor
20506 - Coating and films
Návaznosti výsledku
Projekt
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Návaznosti
S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2024
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů