ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F08%3A00501212" target="_blank" >RIV/49777513:23640/08:00501212 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells

Popis výsledku v původním jazyce

The substrate temperature significantly affects the crystallite size, the effect of the rf. power and pressure on the crystallite size is less pronounced. The largest crystallite size of 300 nm was determined in films deposited in the range of 75 °C to 100 °C. The increasing substrate temperature enhances the doping efficiency resulting in films with a lower resistivity and wider optical gap. The use of the optimal sputtering conditions (75 oC to 100 oC, 1 ?bar and 800 W) for depositing ZnO:Al back reflector in a-Si:H solar cells resulted in an S-shaped J-V curve and a low fill factor. By using an increased pressure of 25 ?bar during sputtering of the ZnO:Al a relative increase of 10 % in the efficiency was achieved in comparison to the cell without the ZnO:Al. The improvement resulted mainly from an enhancement of ~ 1.3 mA/cm2 in the short circuit current.

Název v anglickém jazyce

ZnO:Al films prepared by rf magnetron sputtering applied as back reflectors in thin-film silicon solar cells

Popis výsledku anglicky

The substrate temperature significantly affects the crystallite size, the effect of the rf. power and pressure on the crystallite size is less pronounced. The largest crystallite size of 300 nm was determined in films deposited in the range of 75 °C to 100 °C. The increasing substrate temperature enhances the doping efficiency resulting in films with a lower resistivity and wider optical gap. The use of the optimal sputtering conditions (75 oC to 100 oC, 1 ?bar and 800 W) for depositing ZnO:Al back reflector in a-Si:H solar cells resulted in an S-shaped J-V curve and a low fill factor. By using an increased pressure of 25 ?bar during sputtering of the ZnO:Al a relative increase of 10 % in the efficiency was achieved in comparison to the cell without the ZnO:Al. The improvement resulted mainly from an enhancement of ~ 1.3 mA/cm2 in the short circuit current.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/1M06031" target="_blank" >1M06031: Materiály a komponenty pro ochranu životního prostředí</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2008

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Thin Solid Films

ISSN

0040-6090

e-ISSN

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Svazek periodika

516

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

000259727900096

EID výsledku v databázi Scopus

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