Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F12%3A43916616" target="_blank" >RIV/49777513:23640/12:43916616 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function

Popis výsledku v původním jazyce

Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functionsarising from the instrumental factors and specimen imperfections. The instrumental line profile is approximately Cauchy, whereas the profile arising from the lattice strain is more nearly Gaussian. The function formed from these profiles is known as a Voigt function. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen conten

Název v anglickém jazyce

Microstructure Determination of mc-Si:H Films Analysing the Breadths of Diffraction and Sectral Lines of XRD, FTIR and Raman Spectroscopies using the Voigt function

Popis výsledku anglicky

Microcrystalline silicon is very important material for silicon based thin-film solar cells. It is especially convenient for tandem silicon solar cells using a-Si:H/?c-Si:H double- or triple-junction technology. Because the ?c-Si:H is a composition of amorphous and crystalline phases, its physical properties are strongly influenced by the volume content of the crystalline phase and by the hydrogen content in the films. Experimental diffraction and spectral lines are the convolution of various functionsarising from the instrumental factors and specimen imperfections. The instrumental line profile is approximately Cauchy, whereas the profile arising from the lattice strain is more nearly Gaussian. The function formed from these profiles is known as a Voigt function. The films were investigated by X-ray diffraction, Raman and FTIR spectroscopies using the line profile analysis. Real structure parameters of the films (crystalline volume content, micro-strains, grain sizes, hydrogen conten

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centrum nových technologií a materiálů (CENTEM)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings 27th European Photovoltaic Solar Energy Conference and Exhibition

ISBN

3-936338-28-0

ISSN

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e-ISSN

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Počet stran výsledku

5

Strana od-do

2679-2683

Název nakladatele

WIP

Místo vydání

München

Místo konání akce

Frankfurt, Německo

Datum konání akce

24. 9. 2012

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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