Exploring optoelectronic structure and thermoelectricity of recent photoconductive chalcogenides compounds CsCdInQ3 (Q = Se, Te)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F15%3A43925209" target="_blank" >RIV/49777513:23640/15:43925209 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1039/c4ra13426e" target="_blank" >http://dx.doi.org/10.1039/c4ra13426e</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c4ra13426e" target="_blank" >10.1039/c4ra13426e</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Exploring optoelectronic structure and thermoelectricity of recent photoconductive chalcogenides compounds CsCdInQ3 (Q = Se, Te)

Popis výsledku v původním jazyce

The photoconductive quaternaries, CsCdInQ3 (Q = Se, Te), have been synthesized recently and have shown to be potential materials for hard X-ray and ?-ray detection. These materials have relatively high densities and band gap in range of 1.5MINUS SIGN 3 eV, which make them fulfilling the requirement of hard detection devices. In the present work, we investigate the metal chalcogenide CsCdInQ3 as deduced from a full potential linearize augmented plane wave method based on density functional formalism. Thedirect band gap is estimated at level of EVGGA functional, as 2.11 and 1.75 eV for CsCdInSe3 and CsCdInTe3 respectively. These values are in good agreement with the experimental measurements (2.40 and 1.78 eV) performed from solid-state UVMINUS SIGN visoptical spectroscopy. Optical parameters including the dielectric constant, absorption coefficient, energy loss function reflectivity and refractive index are also reported to investigate the potential role of these metal chalcogenide co

Název v anglickém jazyce

Exploring optoelectronic structure and thermoelectricity of recent photoconductive chalcogenides compounds CsCdInQ3 (Q = Se, Te)

Popis výsledku anglicky

The photoconductive quaternaries, CsCdInQ3 (Q = Se, Te), have been synthesized recently and have shown to be potential materials for hard X-ray and ?-ray detection. These materials have relatively high densities and band gap in range of 1.5MINUS SIGN 3 eV, which make them fulfilling the requirement of hard detection devices. In the present work, we investigate the metal chalcogenide CsCdInQ3 as deduced from a full potential linearize augmented plane wave method based on density functional formalism. Thedirect band gap is estimated at level of EVGGA functional, as 2.11 and 1.75 eV for CsCdInSe3 and CsCdInTe3 respectively. These values are in good agreement with the experimental measurements (2.40 and 1.78 eV) performed from solid-state UVMINUS SIGN visoptical spectroscopy. Optical parameters including the dielectric constant, absorption coefficient, energy loss function reflectivity and refractive index are also reported to investigate the potential role of these metal chalcogenide co

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BE - Teoretická fyzika

OECD FORD obor

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Projekt

<a href="/cs/project/ED2.1.00%2F03.0088" target="_blank" >ED2.1.00/03.0088: Centrum nových technologií a materiálů (CENTEM)</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

RSC Advances

ISSN

2046-2069

e-ISSN

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Svazek periodika

5

Číslo periodika v rámci svazku

13

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

9455-9461

Kód UT WoS článku

000347976500018

EID výsledku v databázi Scopus

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