Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba(Si,Al)(5)(O,N)(8) compounds for light-emitting diodes devices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F15%3A43928066" target="_blank" >RIV/49777513:23640/15:43928066 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.cap.2015.06.025" target="_blank" >http://dx.doi.org/10.1016/j.cap.2015.06.025</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.cap.2015.06.025" target="_blank" >10.1016/j.cap.2015.06.025</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba(Si,Al)(5)(O,N)(8) compounds for light-emitting diodes devices

Popis výsledku v původním jazyce

Due to growing demand on discovering new materials for light-emitting diodes devices, many efforts were made to discover and characterize new inorganic materials such as phosphors. Using the full potential method within density functional theory the electronic and optical properties of BaAl2Si3O4N4 and BaAlSi4O3N5 semiconductors have been investigated. The electronic structure and the optical properties of these phosphors were calculated through a reliable approach of modified Beck-Johnson (mBJ) approach. We found that BaAl2Si3O4N4 and BaAlSi4O3N5 have wide direct band gaps positioned at Gamma about 5.846 and 4.96 eV respectively. The optical properties, namely the dielectric function, optical reflectivity, refractive index and electron energy loss, are reported for radiation up to 15 eV. Our study suggests that BaAl2Si3O4N4 and BaAlSi4O3N5 could be promising materials for applications in the LEDs devices and optoelectronics areas of research.

Název v anglickém jazyce

Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba(Si,Al)(5)(O,N)(8) compounds for light-emitting diodes devices

Popis výsledku anglicky

Due to growing demand on discovering new materials for light-emitting diodes devices, many efforts were made to discover and characterize new inorganic materials such as phosphors. Using the full potential method within density functional theory the electronic and optical properties of BaAl2Si3O4N4 and BaAlSi4O3N5 semiconductors have been investigated. The electronic structure and the optical properties of these phosphors were calculated through a reliable approach of modified Beck-Johnson (mBJ) approach. We found that BaAl2Si3O4N4 and BaAlSi4O3N5 have wide direct band gaps positioned at Gamma about 5.846 and 4.96 eV respectively. The optical properties, namely the dielectric function, optical reflectivity, refractive index and electron energy loss, are reported for radiation up to 15 eV. Our study suggests that BaAl2Si3O4N4 and BaAlSi4O3N5 could be promising materials for applications in the LEDs devices and optoelectronics areas of research.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BE - Teoretická fyzika

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Current Applied Physics

ISSN

1567-1739

e-ISSN

—

Svazek periodika

15

Číslo periodika v rámci svazku

10

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

1160-1167

Kód UT WoS článku

000360915500011

EID výsledku v databázi Scopus

—