Interplay between Vacuum-Grown Monolayers of Alkylphosphonic Acids and the Performance of Organic Transistors Based on Dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F16%3A43929570" target="_blank" >RIV/49777513:23640/16:43929570 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/acsami.6b08426" target="_blank" >http://dx.doi.org/10.1021/acsami.6b08426</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.6b08426" target="_blank" >10.1021/acsami.6b08426</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Interplay between Vacuum-Grown Monolayers of Alkylphosphonic Acids and the Performance of Organic Transistors Based on Dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene

Popis výsledku v původním jazyce

Monolayers of six alkylphosphonic acids ranging from C8 to C18 were prepared by vacuum evaporation and incorporated into low-voltage organic field-effect transistors based on dinaphtho [2,3-b:2',3'-f ]thieno[3,2-b]thiophene (DNTT). Similar to solution-assembled monolayers, the molecular order for vacuum-deposited monolayers improved with increasing length of the aliphatic tail. At the same time, Fourier transform infrared (FTIR) measurements suggested lower molecular coverage for longer phosphonic acids. The comparison of FTIR and vibration frequencies calculated by density functional theory indicated that monodentate bonding does not occur for any phosphonic acid. All monolayers exhibited low surface energy of TILDE OPERATOR+D9117.5 mJ/m2 with a dominating LifshitzMINUS SIGN van der Waals component. Their surface roughness was comparable, while the nanomechanical properties were varied but not correlated to the length of the molecule. However, large improvement in transistor performance was observed with increasing length of the aliphatic tail. Upon going from C8 to C18, the mean threshold voltage decreased from MINUS SIGN 1.37 to MINUS SIGN 1.24 V, the field-effect mobility increased from 0.03 to 0.33 cm2/(V.s), the off-current decreased from ? 8 x 10MINUS SIGN 13 to ? 3 x 10MINUS SIGN 13 A, and for transistors with L = 30 ?m the oncurrent increased from ? 3 x 10MINUS SIGN 8 to ? 2 x 10MINUS SIGN 6 A, and the on/off-current ratio increased from ? 3 x 104 to ? 4 x 106. Similarly, transistors with longer phosphonic acids exhibited much better air and bias-stress stability. The achieved transistor performance opens up a completely "dry" fabrication route for ultrathin dielectrics and low-voltage organic transistors.

Název v anglickém jazyce

Interplay between Vacuum-Grown Monolayers of Alkylphosphonic Acids and the Performance of Organic Transistors Based on Dinaphtho[2,3-b:2',3'-f ]thieno[3,2-b]thiophene

Popis výsledku anglicky

Monolayers of six alkylphosphonic acids ranging from C8 to C18 were prepared by vacuum evaporation and incorporated into low-voltage organic field-effect transistors based on dinaphtho [2,3-b:2',3'-f ]thieno[3,2-b]thiophene (DNTT). Similar to solution-assembled monolayers, the molecular order for vacuum-deposited monolayers improved with increasing length of the aliphatic tail. At the same time, Fourier transform infrared (FTIR) measurements suggested lower molecular coverage for longer phosphonic acids. The comparison of FTIR and vibration frequencies calculated by density functional theory indicated that monodentate bonding does not occur for any phosphonic acid. All monolayers exhibited low surface energy of TILDE OPERATOR+D9117.5 mJ/m2 with a dominating LifshitzMINUS SIGN van der Waals component. Their surface roughness was comparable, while the nanomechanical properties were varied but not correlated to the length of the molecule. However, large improvement in transistor performance was observed with increasing length of the aliphatic tail. Upon going from C8 to C18, the mean threshold voltage decreased from MINUS SIGN 1.37 to MINUS SIGN 1.24 V, the field-effect mobility increased from 0.03 to 0.33 cm2/(V.s), the off-current decreased from ? 8 x 10MINUS SIGN 13 to ? 3 x 10MINUS SIGN 13 A, and for transistors with L = 30 ?m the oncurrent increased from ? 3 x 10MINUS SIGN 8 to ? 2 x 10MINUS SIGN 6 A, and the on/off-current ratio increased from ? 3 x 104 to ? 4 x 106. Similarly, transistors with longer phosphonic acids exhibited much better air and bias-stress stability. The achieved transistor performance opens up a completely "dry" fabrication route for ultrathin dielectrics and low-voltage organic transistors.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BE - Teoretická fyzika

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS applied materials &amp; interfaces

ISSN

1944-8244

e-ISSN

—

Svazek periodika

8

Číslo periodika v rámci svazku

38

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

25405-25414

Kód UT WoS článku

000384518500051

EID výsledku v databázi Scopus

2-s2.0-84989195984