Element-and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F18%3A43952817" target="_blank" >RIV/49777513:23640/18:43952817 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11025/30744" target="_blank" >http://hdl.handle.net/11025/30744</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1038/s41467-018-05823-z" target="_blank" >10.1038/s41467-018-05823-z</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Element-and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Popis výsledku v původním jazyce

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2 p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

Název v anglickém jazyce

Element-and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Popis výsledku anglicky

The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2 p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF15_003%2F0000358" target="_blank" >EF15_003/0000358: Výpočetní a experimentální design pokročilých materiálů s novými funkcionalitami</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nature Communications

ISSN

2041-1723

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

AUG 17 2018

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

"NESTRÁNKOVÁNO"

Kód UT WoS článku

000441865700002

EID výsledku v databázi Scopus

2-s2.0-85051749754