Study on the high magnetic field processed ZnO based diluted magnetic semiconductors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61989100%3A27360%2F19%3A10242415" target="_blank" >RIV/61989100:27360/19:10242415 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0272884219318309" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0272884219318309</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.ceramint.2019.07.011" target="_blank" >10.1016/j.ceramint.2019.07.011</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study on the high magnetic field processed ZnO based diluted magnetic semiconductors

Popis výsledku v původním jazyce

Diluted magnetic semiconductors with the unique advantage of simultaneously manipulating the spin and charge of electrons possess potential applications in spintronics and quantum computing, which attracts long-term tremendous attention. It is pivotal and meaningful for practical application that room temperature ferromagnetism has been acquired successively in ZnO based diluted magnetic semiconductors. Although the unclear origin of ferromagnetism hampers their further development, there is a consensus that their magnetic properties are susceptible to materials preparation process. As an extreme condition with high-intensity energy, indirect contact and controllability, high magnetic field has been applied to various materials fabrication. Similarly, high magnetic field is employed in the preparation of ZnO based diluted magnetic semiconductors to adjust microstructural and magnetic properties, such as enhancing Curie temperature, inducing the transition from paramagnetism or diamagnetism to ferromagnetism, and improving ferromagnetism, while exploring the ferromagnetism mechanism from another perspective. In this brief perspective, recent study on the high magnetic field processed ZnO based diluted magnetic semiconductors is reviewed. (C) 2019

Název v anglickém jazyce

Study on the high magnetic field processed ZnO based diluted magnetic semiconductors

Popis výsledku anglicky

Diluted magnetic semiconductors with the unique advantage of simultaneously manipulating the spin and charge of electrons possess potential applications in spintronics and quantum computing, which attracts long-term tremendous attention. It is pivotal and meaningful for practical application that room temperature ferromagnetism has been acquired successively in ZnO based diluted magnetic semiconductors. Although the unclear origin of ferromagnetism hampers their further development, there is a consensus that their magnetic properties are susceptible to materials preparation process. As an extreme condition with high-intensity energy, indirect contact and controllability, high magnetic field has been applied to various materials fabrication. Similarly, high magnetic field is employed in the preparation of ZnO based diluted magnetic semiconductors to adjust microstructural and magnetic properties, such as enhancing Curie temperature, inducing the transition from paramagnetism or diamagnetism to ferromagnetism, and improving ferromagnetism, while exploring the ferromagnetism mechanism from another perspective. In this brief perspective, recent study on the high magnetic field processed ZnO based diluted magnetic semiconductors is reviewed. (C) 2019

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20501 - Materials engineering

Projekt

—

Návaznosti

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Ceramics International

ISSN

0272-8842

e-ISSN

—

Svazek periodika

45

Číslo periodika v rámci svazku

16

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

13

Strana od-do

19583-19595

Kód UT WoS článku

000488148100001

EID výsledku v databázi Scopus

2-s2.0-85068257441