Enhancing the Electrical Properties of Porous Silicon Photodetector by Depositing MWCNTs

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F18%3A43954209" target="_blank" >RIV/49777513:23640/18:43954209 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Enhancing the Electrical Properties of Porous Silicon Photodetector by Depositing MWCNTs

Popis výsledku v původním jazyce

In the present work, multiwall carbon nanotubes (MWCNTs) layers dispersed in DMF and citric acid deposited by drop casting on porous silicon (PSi) photodetector have been prepared by electrochemical etching (ECE) process at 25 mA/cm(2) for 20 min. X-ray diffraction (XRD), atomic force microscopy (AFM), Fourier transformation infrared spectroscopy (FTIR), energy dispersive X-ray (EDX), current-voltage (I-V) characteristics, capacitance-voltage(C-V) characteristics, spectral responsivity (R.) and specific detectivity (D*) before and after depositing MWCNTs layers were investigated. It was found that, the On/Off ratio was increased after depositing MWCNTs, while ideality factor and built in potential were decreased and this fact indicates that Al/PSi/c-Si/Al photodetector was nearly approaching the ideal diode characteristic after deposition process. Significant enhancement in spectral responsivity and specific detectivity were also noticed after depositing MWCNTs on porous matrix.

Název v anglickém jazyce

Enhancing the Electrical Properties of Porous Silicon Photodetector by Depositing MWCNTs

Popis výsledku anglicky

In the present work, multiwall carbon nanotubes (MWCNTs) layers dispersed in DMF and citric acid deposited by drop casting on porous silicon (PSi) photodetector have been prepared by electrochemical etching (ECE) process at 25 mA/cm(2) for 20 min. X-ray diffraction (XRD), atomic force microscopy (AFM), Fourier transformation infrared spectroscopy (FTIR), energy dispersive X-ray (EDX), current-voltage (I-V) characteristics, capacitance-voltage(C-V) characteristics, spectral responsivity (R.) and specific detectivity (D*) before and after depositing MWCNTs layers were investigated. It was found that, the On/Off ratio was increased after depositing MWCNTs, while ideality factor and built in potential were decreased and this fact indicates that Al/PSi/c-Si/Al photodetector was nearly approaching the ideal diode characteristic after deposition process. Significant enhancement in spectral responsivity and specific detectivity were also noticed after depositing MWCNTs on porous matrix.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10301 - Atomic, molecular and chemical physics (physics of atoms and molecules including collision, interaction with radiation, magnetic resonances, Mössbauer effect)

Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

International Journal of Nanoelectronics and Materials

ISSN

1985-5761

e-ISSN

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Svazek periodika

11

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

MY - Malajsie

Počet stran výsledku

8

Strana od-do

241-248

Kód UT WoS článku

000438872700001

EID výsledku v databázi Scopus

2-s2.0-85050335470