Layered selenophosphate HgPSe3 single crystals: a new candidate for X-ray to visible light photodetectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F22%3A43924023" target="_blank" >RIV/60461373:22310/22:43924023 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.rsc.org/en/content/articlehtml/2022/tc/d2tc00904h" target="_blank" >https://pubs.rsc.org/en/content/articlehtml/2022/tc/d2tc00904h</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/D2TC00904H" target="_blank" >10.1039/D2TC00904H</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Layered selenophosphate HgPSe3 single crystals: a new candidate for X-ray to visible light photodetectors

Popis výsledku v původním jazyce

Light detection over a broad spectral range is essential for optoelectronic applications, including spectroscopy, communication sensing and industrial inspection. Even though a few materials can successfully achieve broadband photodetectors, wavelength regimes detected by these detectors are limited to the ultraviolet (UV) to infrared (IR) wavelength range. Furthermore, detection under X-rays remains extensively unexplored because of the lack of desirable materials. Herein, we pioneer a broadband photodetector based on a frontier layered HgPSe3 single crystal synthesized via chemical vapor transport, as its photodetection covers the X-ray to visible range. This high-quality single crystal is directly used for photodetectors with a facile architecture and achieves a high sensitivity (similar to 89 mu C Gy(-1) cm(-2)) under X-rays, which is about 4.5-fold that of a traditional alpha-Se-based X-ray detector. In the visible light range, the as-fabricated HgPSe3 crystal-based detector can achieve better eminent optoelectronic performance: a responsivity of 4 A W-1 at similar to 650 nm, a detectivity of 1.45 x 10(9) Jones and a relatively fast photoresponse time (0.49 s rise time under X-rays and 0.08 s rise time under similar to 650 nm). These results suggest the potential of the emerging layered thio- and selenophosphate materials for advanced optoelectronic applications.

Název v anglickém jazyce

Layered selenophosphate HgPSe3 single crystals: a new candidate for X-ray to visible light photodetectors

Popis výsledku anglicky

Light detection over a broad spectral range is essential for optoelectronic applications, including spectroscopy, communication sensing and industrial inspection. Even though a few materials can successfully achieve broadband photodetectors, wavelength regimes detected by these detectors are limited to the ultraviolet (UV) to infrared (IR) wavelength range. Furthermore, detection under X-rays remains extensively unexplored because of the lack of desirable materials. Herein, we pioneer a broadband photodetector based on a frontier layered HgPSe3 single crystal synthesized via chemical vapor transport, as its photodetection covers the X-ray to visible range. This high-quality single crystal is directly used for photodetectors with a facile architecture and achieves a high sensitivity (similar to 89 mu C Gy(-1) cm(-2)) under X-rays, which is about 4.5-fold that of a traditional alpha-Se-based X-ray detector. In the visible light range, the as-fabricated HgPSe3 crystal-based detector can achieve better eminent optoelectronic performance: a responsivity of 4 A W-1 at similar to 650 nm, a detectivity of 1.45 x 10(9) Jones and a relatively fast photoresponse time (0.49 s rise time under X-rays and 0.08 s rise time under similar to 650 nm). These results suggest the potential of the emerging layered thio- and selenophosphate materials for advanced optoelectronic applications.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/LL2101" target="_blank" >LL2101: Příští Generace Monoelementárních 2D Materiálů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Materials Chemistry C

ISSN

2050-7526

e-ISSN

2050-7534

Svazek periodika

10

Číslo periodika v rámci svazku

22

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

11

Strana od-do

8834-8844

Kód UT WoS článku

000800609100001

EID výsledku v databázi Scopus

2-s2.0-85131807354