Millimeter-Sized Layered GeI2 Single Crystals as a Promising Platform for Broadband Photodetectors

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F23%3A43927561" target="_blank" >RIV/60461373:22310/23:43927561 - isvavai.cz</a>

Výsledek na webu

<a href="https://pubs.acs.org/doi/full/10.1021/acsaelm.3c00614" target="_blank" >https://pubs.acs.org/doi/full/10.1021/acsaelm.3c00614</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsaelm.3c00614" target="_blank" >10.1021/acsaelm.3c00614</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Millimeter-Sized Layered GeI2 Single Crystals as a Promising Platform for Broadband Photodetectors

Popis výsledku v původním jazyce

In the modern era, the limitations of conventional semiconductorshave prompted the increasing importance of high-quality layered materialsfor high-performance (opto)electronic devices. Herein, we report thesynthesis of millimeter-sized GeI2 single crystals, utilizedas a broadband photodetector. The material was grown directly fromits elements in a large-scale vapor transport method. The resultingfreestanding crystals, with a diameter of up to 5 mm, were characterizedthrough structural and optical measurements. Subsequently, a metal-semiconductor-metalbroadband photodetector was fabricated. The as-fabricated device exhibitedpromising performance in photocurrent measurements when subjectedto a 460 nm laser with a power density of 3.8 mW cm(-2), including a high responsivity of 21.1 mA W-1,a relatively fast photoresponse speed (a rise time of 0.16 s and adecay time of 0.5 s), and a commendable specific detectivity of 5.54x 10(7) Jones at room temperature.

Název v anglickém jazyce

Millimeter-Sized Layered GeI2 Single Crystals as a Promising Platform for Broadband Photodetectors

Popis výsledku anglicky

In the modern era, the limitations of conventional semiconductorshave prompted the increasing importance of high-quality layered materialsfor high-performance (opto)electronic devices. Herein, we report thesynthesis of millimeter-sized GeI2 single crystals, utilizedas a broadband photodetector. The material was grown directly fromits elements in a large-scale vapor transport method. The resultingfreestanding crystals, with a diameter of up to 5 mm, were characterizedthrough structural and optical measurements. Subsequently, a metal-semiconductor-metalbroadband photodetector was fabricated. The as-fabricated device exhibitedpromising performance in photocurrent measurements when subjectedto a 460 nm laser with a power density of 3.8 mW cm(-2), including a high responsivity of 21.1 mA W-1,a relatively fast photoresponse speed (a rise time of 0.16 s and adecay time of 0.5 s), and a commendable specific detectivity of 5.54x 10(7) Jones at room temperature.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

<a href="/cs/project/LUAUS23049" target="_blank" >LUAUS23049: Hledání nových 2D nanomagnetů pro aplikace v nanoelektronice a spintronice</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Electronic Materials

ISSN

2637-6113

e-ISSN

2637-6113

Svazek periodika

5

Číslo periodika v rámci svazku

8

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

4401-4408

Kód UT WoS článku

001030128100001

EID výsledku v databázi Scopus

2-s2.0-85166765731