Nature of the metallic and in-gap states in Ni-doped SrTiO3

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F49777513%3A23640%2F24%3A43972910" target="_blank" >RIV/49777513:23640/24:43972910 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1063/5.0183140" target="_blank" >https://doi.org/10.1063/5.0183140</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0183140" target="_blank" >10.1063/5.0183140</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nature of the metallic and in-gap states in Ni-doped SrTiO3

Popis výsledku v původním jazyce

Epitaxial thin films of SrTiO3(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band of n-doped pristine SrTiO3 toward the Fermi level (in the direction of p-doping) and reducing the bandgap. In the Ti t2g-derived mobile electron system (MES), the Ni doping depopulates the out-of-plane dxz/yz-derived bands, transforming the MES to two-dimensional and progressively reduces the electron density embedded in the in-plane dxy-derived bands as reflected in their Fermi momentum. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum and decipher the full spectrum of the in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES, and in-gap states in Ni-doped SrTiO3 may help the development of this material toward its device applications associated with the reduced optical bandgap.

Název v anglickém jazyce

Nature of the metallic and in-gap states in Ni-doped SrTiO3

Popis výsledku anglicky

Epitaxial thin films of SrTiO3(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band of n-doped pristine SrTiO3 toward the Fermi level (in the direction of p-doping) and reducing the bandgap. In the Ti t2g-derived mobile electron system (MES), the Ni doping depopulates the out-of-plane dxz/yz-derived bands, transforming the MES to two-dimensional and progressively reduces the electron density embedded in the in-plane dxy-derived bands as reflected in their Fermi momentum. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum and decipher the full spectrum of the in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES, and in-gap states in Ni-doped SrTiO3 may help the development of this material toward its device applications associated with the reduced optical bandgap.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10405 - Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis)

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

APL Materials

ISSN

2166-532X

e-ISSN

2166-532X

Svazek periodika

12

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

9

Strana od-do

—

Kód UT WoS článku

001147721100006

EID výsledku v databázi Scopus

2-s2.0-85183323440