Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates

Popis výsledku v původním jazyce

In this contribution the reflectance of thin films on semiconductor substrates with correlated randomly rough boundaries is analyzed. The theoretical approach is based on the scalar theory of diffraction of light. The numerical analysis of the reflectance is performed for rough thin films on GaAs and Si substrates. This analysis demonstrates that the reflectance depends not only on the rms values of the heights of the irregularities of the boundary roughness but it also depends on values of cross-correlation coefficients between the rough boundaries. The magnitudes of boundary roughness and cross-correlation between the rough boundaries depend on the technological procedures of creating thin film systems. By means of interpreting the reflectance measured the values of the optical and roughness parameters can be determined. It is also demonstrated in our contribution.

Název v anglickém jazyce

Influence of Cross-Correlation of Rough Boundaries on Reflectance of Thin Films on GaAs and Si Substrates

Popis výsledku anglicky

In this contribution the reflectance of thin films on semiconductor substrates with correlated randomly rough boundaries is analyzed. The theoretical approach is based on the scalar theory of diffraction of light. The numerical analysis of the reflectance is performed for rough thin films on GaAs and Si substrates. This analysis demonstrates that the reflectance depends not only on the rms values of the heights of the irregularities of the boundary roughness but it also depends on values of cross-correlation coefficients between the rough boundaries. The magnitudes of boundary roughness and cross-correlation between the rough boundaries depend on the technological procedures of creating thin film systems. By means of interpreting the reflectance measured the values of the optical and roughness parameters can be determined. It is also demonstrated in our contribution.

Druh

D - Stať ve sborníku

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2009

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

AIP Conference Proceedings

ISBN

978-0-7354-0736-7

ISSN

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e-ISSN

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Počet stran výsledku

2

Strana od-do

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Název nakladatele

American Institute of Physics

Místo vydání

USA

Místo konání akce

Brazílie, Rio de Janeiro

Datum konání akce

1. 1. 2008

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000281590800009