Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216224%3A14310%2F17%3A00094430" target="_blank" >RIV/00216224:14310/17:00094430 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2016.10.186" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2016.10.186</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2016.10.186" target="_blank" >10.1016/j.apsusc.2016.10.186</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness

Popis výsledku v původním jazyce

In this paper epitaxial ZnSe thin films prepared by molecular beam epitaxy onto GaAs single crystal substrates exhibiting two defects, i.e. boundary roughness and thickness non-uniformity, are optically characterized using a combination of spectroscopic ellipsometry and near-normal spectroscopic reflectometry. The influence of boundary roughness is included into optical quantity formulae by the combination of the scalar diffraction theory and Rayleigh-Rice theory. Thickness non-uniformity is incorporated by means of averaging the elements of the unnormalized Mueller matrices. The universal dispersion model of the optical constants of the ZnSe thin films based on parametrization of the joint density of electronic states is used. Very thin overalyers modeled by rough thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe thin films. The spectral dependencies of the optical constants of the ZnSe thin films are determined within the wide spectral region (0.6–8.7 eV). Moreover, the mean thickness of the ZnSe thin films and thickness of overlayers are determined together with the other structural parameters characterizing the defects. The values of roughness parameters, determined by the optical method, are verified by a comparison with results achieved by atomic force microscopy. It is also shown that approximations of the local reflection coefficients presented are usable for processing the experimental data.

Název v anglickém jazyce

Ellipsometric and reflectometric characterization of thin films exhibiting thickness non-uniformity and boundary roughness

Popis výsledku anglicky

In this paper epitaxial ZnSe thin films prepared by molecular beam epitaxy onto GaAs single crystal substrates exhibiting two defects, i.e. boundary roughness and thickness non-uniformity, are optically characterized using a combination of spectroscopic ellipsometry and near-normal spectroscopic reflectometry. The influence of boundary roughness is included into optical quantity formulae by the combination of the scalar diffraction theory and Rayleigh-Rice theory. Thickness non-uniformity is incorporated by means of averaging the elements of the unnormalized Mueller matrices. The universal dispersion model of the optical constants of the ZnSe thin films based on parametrization of the joint density of electronic states is used. Very thin overalyers modeled by rough thin films with identically rough boundaries are taken into account on the upper boundaries of the ZnSe thin films. The spectral dependencies of the optical constants of the ZnSe thin films are determined within the wide spectral region (0.6–8.7 eV). Moreover, the mean thickness of the ZnSe thin films and thickness of overlayers are determined together with the other structural parameters characterizing the defects. The values of roughness parameters, determined by the optical method, are verified by a comparison with results achieved by atomic force microscopy. It is also shown that approximations of the local reflection coefficients presented are usable for processing the experimental data.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

421

Číslo periodika v rámci svazku

November

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

10

Strana od-do

687-696

Kód UT WoS článku

000408756700066

EID výsledku v databázi Scopus

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