Analysis of memristors with nonlinear memristance versus state maps

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F17%3A00534605" target="_blank" >RIV/60162694:G43__/17:00534605 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26220/17:PU125257

Výsledek na webu

<a href="http://dx.doi.org/10.1002/cta.2314" target="_blank" >http://dx.doi.org/10.1002/cta.2314</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/cta.2314" target="_blank" >10.1002/cta.2314</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Analysis of memristors with nonlinear memristance versus state maps

Popis výsledku v původním jazyce

According to the axiomatic definition of the memristor from 1971, its properties are unambiguously determined by the memristance vs. charge (or flux) map. The original model of the “HP memristor“ introduces this map via a linear function, that represents this memristor as a variable resistor whose resistance is linearly dependent on the amount of charge flowing through. However, some analog applications require nonlinear, frequently exponential or logarithmic dependence of the resistance on an external controlling variable. The memristor with nonlinear memristance vs. charge map is analyzed in the paper. The results are specified for the exponential type of this nonlinearity, which may be useful for future applications. Analytic formulae of the area of the pinched hysteresis loop of such a memristor are derived for harmonic excitation. It is also shown that the current flowing through such a memristor, which is driven by a voltage of arbitrary waveform, conforms to the Abel differential equation, and its closed-form solution is found.

Název v anglickém jazyce

Analysis of memristors with nonlinear memristance versus state maps

Popis výsledku anglicky

According to the axiomatic definition of the memristor from 1971, its properties are unambiguously determined by the memristance vs. charge (or flux) map. The original model of the “HP memristor“ introduces this map via a linear function, that represents this memristor as a variable resistor whose resistance is linearly dependent on the amount of charge flowing through. However, some analog applications require nonlinear, frequently exponential or logarithmic dependence of the resistance on an external controlling variable. The memristor with nonlinear memristance vs. charge map is analyzed in the paper. The results are specified for the exponential type of this nonlinearity, which may be useful for future applications. Analytic formulae of the area of the pinched hysteresis loop of such a memristor are derived for harmonic excitation. It is also shown that the current flowing through such a memristor, which is driven by a voltage of arbitrary waveform, conforms to the Abel differential equation, and its closed-form solution is found.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

International Journal of Circuit Theory and Applications

ISSN

0098-9886

e-ISSN

1097-007X

Svazek periodika

45

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

19

Strana od-do

1814-1832

Kód UT WoS článku

000415906300021

EID výsledku v databázi Scopus

2-s2.0-85034637288