Modelling the Voltage Degradation of High-Power LEDs Using approach based on Bayesian-Optimized Bidirectional Long Short-Term Neural Network

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60162694%3AG43__%2F26%3A00564666" target="_blank" >RIV/60162694:G43__/26:00564666 - isvavai.cz</a>

Výsledek na webu

<a href="http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=11061248" target="_blank" >http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=11061248</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/ICMT65201.2025.11061320" target="_blank" >10.1109/ICMT65201.2025.11061320</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Modelling the Voltage Degradation of High-Power LEDs Using approach based on Bayesian-Optimized Bidirectional Long Short-Term Neural Network

Popis výsledku v původním jazyce

High-power LEDs have become integral components in modern systems, including lighting, signalling, visible communication, medical applications, and other critical fields. In addition to their practical applications, these LEDs have garnered significant attention in reliability research. Key objectives in this domain include data collection, degradation modelling, reliability prediction, and comprehensive reliability assessment. This study introduces a novel methodology based on Bayesian optimized-Bidirectional Long Short-Term Memory Neural Network to model and predict the degradation of LEDs under ageing test conditions. The proposed approach leverages the strengths of these techniques to capture the nonlinear and complex degradation behaviours of LEDs effectively. The performance of the model is rigorously verified using widely accepted metrics such as Root Mean Square Error (RMSE), Mean Absolute Percentage Error (MAPE), and R-squared (R}^{2}). The results indicate that the proposed method offers robust and accurate predictions, showcasing its potential as a reliable approach for modelling and predicting the reliability of high-power LEDs. This approach contributes to advancing the field of LED reliability research and supports the development of innovative solutions for predicting the performance and lifespan of these critical devices.

Název v anglickém jazyce

Modelling the Voltage Degradation of High-Power LEDs Using approach based on Bayesian-Optimized Bidirectional Long Short-Term Neural Network

Popis výsledku anglicky

High-power LEDs have become integral components in modern systems, including lighting, signalling, visible communication, medical applications, and other critical fields. In addition to their practical applications, these LEDs have garnered significant attention in reliability research. Key objectives in this domain include data collection, degradation modelling, reliability prediction, and comprehensive reliability assessment. This study introduces a novel methodology based on Bayesian optimized-Bidirectional Long Short-Term Memory Neural Network to model and predict the degradation of LEDs under ageing test conditions. The proposed approach leverages the strengths of these techniques to capture the nonlinear and complex degradation behaviours of LEDs effectively. The performance of the model is rigorously verified using widely accepted metrics such as Root Mean Square Error (RMSE), Mean Absolute Percentage Error (MAPE), and R-squared (R}^{2}). The results indicate that the proposed method offers robust and accurate predictions, showcasing its potential as a reliable approach for modelling and predicting the reliability of high-power LEDs. This approach contributes to advancing the field of LED reliability research and supports the development of innovative solutions for predicting the performance and lifespan of these critical devices.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

20301 - Mechanical engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2025 10th International Conference on Military Technologies, ICMT 2025 - Proceedings

ISBN

979-8-3315-2338-1

ISSN

—

e-ISSN

2996-4474

Počet stran výsledku

7

Strana od-do

—

Název nakladatele

Institute of Electrical and Electronics Engineers Inc.

Místo vydání

Brno

Místo konání akce

Brno, Czech Republic

Datum konání akce

27. 5. 2025

Typ akce podle státní příslušnosti

CST - Celostátní akce

Kód UT WoS článku

001545807300061