Growth and structural properties of GaAs on Al pseudo-substrates for ultrafast optoelectronics

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Growth and structural properties of GaAs on Al pseudo-substrates for ultrafast optoelectronics

Popis výsledku v původním jazyce

GaAs is broadly used in modern electronics. On the other hand, application of GaAs-based devices in high power electronics is complicated due to the substantial excess heat generated during device operation. One possibility to remove the excess heat is to employ substrates with high thermal conductivity. In this contribution we present the growth of GaAs layers by MOVPE on aluminum (111) pseudo-substrates designed for an improved heat management in GaAs electronic circuits. Pseudo-substrates for GaAs deposition were prepared by Al evaporation on (100) GaAs substrate and subsequently heat treated. The GaAs layers exhibit polycrystalline character with high preferential orientation in (100) direction. The roughness of the layers was in the range of 10 to100 nm and the thickness in the range of 500 ? 3000 nm. These layers exhibit extremely low carrier lifetime due to the growth-induced defects and are suitable for fabrication of ultrafast MSM photodetectors.

Název v anglickém jazyce

Growth and structural properties of GaAs on Al pseudo-substrates for ultrafast optoelectronics

Popis výsledku anglicky

GaAs is broadly used in modern electronics. On the other hand, application of GaAs-based devices in high power electronics is complicated due to the substantial excess heat generated during device operation. One possibility to remove the excess heat is to employ substrates with high thermal conductivity. In this contribution we present the growth of GaAs layers by MOVPE on aluminum (111) pseudo-substrates designed for an improved heat management in GaAs electronic circuits. Pseudo-substrates for GaAs deposition were prepared by Al evaporation on (100) GaAs substrate and subsequently heat treated. The GaAs layers exhibit polycrystalline character with high preferential orientation in (100) direction. The roughness of the layers was in the range of 10 to100 nm and the thickness in the range of 500 ? 3000 nm. These layers exhibit extremely low carrier lifetime due to the growth-induced defects and are suitable for fabrication of ultrafast MSM photodetectors.

Druh

D - Stať ve sborníku

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

ASDAM 2010

ISBN

978-1-4244-8572-7

ISSN

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e-ISSN

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Počet stran výsledku

4

Strana od-do

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Název nakladatele

STU Bratislava

Místo vydání

Bratislava

Místo konání akce

Smolenice, Slovensko

Datum konání akce

1. 1. 2010

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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