Application of palladium in ohmic contacts to GaAs

Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43892401" target="_blank" >RIV/60461373:22310/11:43892401 - isvavai.cz</a>
Výsledek na webu
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Jazyk výsledku
angličtina
Název v původním jazyce
Application of palladium in ohmic contacts to GaAs
Popis výsledku v původním jazyce
Chapter named Application of palladium in ohmic contacts to GaAs deals with studying of parameters of the PdGe contact metallization on N-type GaAs. Significance of this subject results from the fact that the said metallization is nowadays frequently used for formation of ohmic contacts on GaAs. The reason is very good parameters, including above all low contact resistivity and long-term thermal stability. In this chapter there are presented possibilities how improving the parameters of the basic Ge/Pd/GaAs structure by various modifications.
Název v anglickém jazyce
Application of palladium in ohmic contacts to GaAs
Popis výsledku anglicky
Chapter named Application of palladium in ohmic contacts to GaAs deals with studying of parameters of the PdGe contact metallization on N-type GaAs. Significance of this subject results from the fact that the said metallization is nowadays frequently used for formation of ohmic contacts on GaAs. The reason is very good parameters, including above all low contact resistivity and long-term thermal stability. In this chapter there are presented possibilities how improving the parameters of the basic Ge/Pd/GaAs structure by various modifications.

Rok uplatnění
2011
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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