Annealing of gold nanostructures sputtered on glass substrate

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F11%3A43892498" target="_blank" >RIV/60461373:22310/11:43892498 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/44555601:13440/11:43878468 RIV/00216275:25310/11:39892213 RIV/49777513:23640/11:43898564

Výsledek na webu

<a href="http://dx.doi.org/10.1007/s00339-010-6167-1" target="_blank" >http://dx.doi.org/10.1007/s00339-010-6167-1</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1007/s00339-010-6167-1" target="_blank" >10.1007/s00339-010-6167-1</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Annealing of gold nanostructures sputtered on glass substrate

Popis výsledku v původním jazyce

The effects of annealing at 300 A degrees C on gold nanostructures sputtered onto glass substrate were studied using XRD, SAXSees, the Van der Pauw method and ellipsometry. As-sputtered and annealed samples exhibit a different dependence of the gold lattice parameter on the sputtering time. With increasing sputtering time the average thickness of the layer and the size of gold crystallites increased. Another rapid enlargement of the crystallites is observed after annealing. The volume resistivity decreases rapidly with the increasing sputtering time for both, as-deposited and annealed structures. With increasing sputtering time initially discontinuous gold coverage changes gradually in a continuous one. Electrically continuous gold coverage on the as-sputtered and annealed samples exhibits the same concentration of free charge carriers and Hall mobility. Optical constants of as-deposited and annealed gold films determined by ellipsometry support resistivity measurements and clearly man

Název v anglickém jazyce

Annealing of gold nanostructures sputtered on glass substrate

Popis výsledku anglicky

The effects of annealing at 300 A degrees C on gold nanostructures sputtered onto glass substrate were studied using XRD, SAXSees, the Van der Pauw method and ellipsometry. As-sputtered and annealed samples exhibit a different dependence of the gold lattice parameter on the sputtering time. With increasing sputtering time the average thickness of the layer and the size of gold crystallites increased. Another rapid enlargement of the crystallites is observed after annealing. The volume resistivity decreases rapidly with the increasing sputtering time for both, as-deposited and annealed structures. With increasing sputtering time initially discontinuous gold coverage changes gradually in a continuous one. Electrically continuous gold coverage on the as-sputtered and annealed samples exhibits the same concentration of free charge carriers and Hall mobility. Optical constants of as-deposited and annealed gold films determined by ellipsometry support resistivity measurements and clearly man

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CD - Makromolekulární chemie

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics A-Materials Science &amp; Processing

ISSN

0947-8396

e-ISSN

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Svazek periodika

102

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

605-610

Kód UT WoS článku

000287320600015

EID výsledku v databázi Scopus

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