Structural, electrical and optical studies of gold nanostructures formed by Ar plasma-assisted sputtering

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F12%3A43894045" target="_blank" >RIV/60461373:22310/12:43894045 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nimb.2011.01.063" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2011.01.063</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nimb.2011.01.063" target="_blank" >10.1016/j.nimb.2011.01.063</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Structural, electrical and optical studies of gold nanostructures formed by Ar plasma-assisted sputtering

Popis výsledku v původním jazyce

Ultrathin gold layers with different thickness of (10-100 nm) on the glass substrate were obtained by Ar plasma-assisted sputtering. The effects of annealing on gold structures sputtered onto glass substrate were studied using AFM, SEM, UV-Vis methods and electrical measurements. Concentration of free charge carriers were determined from the measured resistance and the Hall constant measured by the Van der Pauw method. We have shown that post-deposition thermal treatment leads in significant change in surface morphology of the sputtered Au structures. Our results suggest that the annealing affects electrical properties of the Au coverage namely electrical sheet resistance, free carriers volume concentration, the saturation of which is in comparison with as-sputtered samples shifted towards thicker structures. While semi-conductive character of as-sputtered samples diminishes close to the Au structure thickness of ca 20 nm, in the case of the annealed structures zero-level saturation is

Název v anglickém jazyce

Structural, electrical and optical studies of gold nanostructures formed by Ar plasma-assisted sputtering

Popis výsledku anglicky

Ultrathin gold layers with different thickness of (10-100 nm) on the glass substrate were obtained by Ar plasma-assisted sputtering. The effects of annealing on gold structures sputtered onto glass substrate were studied using AFM, SEM, UV-Vis methods and electrical measurements. Concentration of free charge carriers were determined from the measured resistance and the Hall constant measured by the Van der Pauw method. We have shown that post-deposition thermal treatment leads in significant change in surface morphology of the sputtered Au structures. Our results suggest that the annealing affects electrical properties of the Au coverage namely electrical sheet resistance, free carriers volume concentration, the saturation of which is in comparison with as-sputtered samples shifted towards thicker structures. While semi-conductive character of as-sputtered samples diminishes close to the Au structure thickness of ca 20 nm, in the case of the annealed structures zero-level saturation is

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JJ - Ostatní materiály

OECD FORD obor

—

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section B

ISSN

0168-583X

e-ISSN

—

Svazek periodika

272

Číslo periodika v rámci svazku

20120201

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

193-197

Kód UT WoS článku

000301159900045

EID výsledku v databázi Scopus

—