Time dependence and mechanism of Au nanostructure transformation during annealing
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F14%3A43897650" target="_blank" >RIV/60461373:22310/14:43897650 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1142/S1793604714500222" target="_blank" >http://dx.doi.org/10.1142/S1793604714500222</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1142/S1793604714500222" target="_blank" >10.1142/S1793604714500222</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Time dependence and mechanism of Au nanostructure transformation during annealing
Popis výsledku v původním jazyce
Melting point of thin nanostructured materials decreases with decreasing particle size. This can influence thermal stability of thin films used in electronic applications and compromise their function. Therefore it is desirable to explore connection between metal film thickness and its thermal stability. Thin films of Au were sputtered for 10-300 s (2-60 nm thick layers). Post deposition annealing was carried out at 150-300 degrees C for 15-180 min. Sheet electrical resistance measurements were employedto investigate electrical continuousness of the Au film. A significant leap in percolation threshold was found between samples annealed at 250 degrees C and 300 degrees C. This suggests that phase transition occurs during annealing, however, annealing for different times suggests the structural modification is a gradual and slow process, which is a sign of diffusion in a solid state. This was further supported by UV-Vis measurements which showed slow evolution of plasmon resonance peak.
Název v anglickém jazyce
Time dependence and mechanism of Au nanostructure transformation during annealing
Popis výsledku anglicky
Melting point of thin nanostructured materials decreases with decreasing particle size. This can influence thermal stability of thin films used in electronic applications and compromise their function. Therefore it is desirable to explore connection between metal film thickness and its thermal stability. Thin films of Au were sputtered for 10-300 s (2-60 nm thick layers). Post deposition annealing was carried out at 150-300 degrees C for 15-180 min. Sheet electrical resistance measurements were employedto investigate electrical continuousness of the Au film. A significant leap in percolation threshold was found between samples annealed at 250 degrees C and 300 degrees C. This suggests that phase transition occurs during annealing, however, annealing for different times suggests the structural modification is a gradual and slow process, which is a sign of diffusion in a solid state. This was further supported by UV-Vis measurements which showed slow evolution of plasmon resonance peak.
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
JJ - Ostatní materiály
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Příprava, modifikace a charakterizace materiálů zářením</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2014
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Functional Materials Letters
ISSN
1793-6047
e-ISSN
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Svazek periodika
7
Číslo periodika v rámci svazku
3
Stát vydavatele periodika
SG - Singapurská republika
Počet stran výsledku
4
Strana od-do
"1450022.1"-4
Kód UT WoS článku
000336967500003
EID výsledku v databázi Scopus
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