Silicon carbide for chemical application prepared by SPS method

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Silicon carbide for chemical application prepared by SPS method

Popis výsledku v původním jazyce

Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering. It is an excellent abrasive medium as well as a construction material with high resistance to mechanical andchemical deterioration. Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C - principle used for industrial production of silicon), thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless, it does not produce SiC form applicable for laboratory purposes. Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid. Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production. However, SiO2 located between the planes of growth o

Název v anglickém jazyce

Silicon carbide for chemical application prepared by SPS method

Popis výsledku anglicky

Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering. It is an excellent abrasive medium as well as a construction material with high resistance to mechanical andchemical deterioration. Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C - principle used for industrial production of silicon), thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymer binder. This method is suitable for tailoring of mechanical properties; nevertheless, it does not produce SiC form applicable for laboratory purposes. Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid. Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production. However, SiO2 located between the planes of growth o

Druh

D - Stať ve sborníku

CEP obor

CA - Anorganická chemie

OECD FORD obor

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Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

2nd International Conference on Chemical Technology - ICCT 2014

ISBN

978-80-86238-61-6

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

129-134

Název nakladatele

Česká společnost průmyslové chemie

Místo vydání

Praha

Místo konání akce

Mikulov

Datum konání akce

7. 4. 2014

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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