Silicon carbide for chemical application prepared by SPS method

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F61389021%3A_____%2F14%3A00432105" target="_blank" >RIV/61389021:_____/14:00432105 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Silicon carbide for chemical application prepared by SPS method

Popis výsledku v původním jazyce

Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C ? principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymerbinder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC

Název v anglickém jazyce

Silicon carbide for chemical application prepared by SPS method

Popis výsledku anglicky

Silicon carbide discovered more than 121 years ago has a wide usage in the mechanical engineering industry as well as in electrical engineering.It is an excellent abrasive medium as well as a construction material with high resistance to mechanical and chemical deterioration.Under standard condition, silicon carbide has no melting point (decomposes at 2700 °C ? principle used for industrial production of silicon),thus the bulk form must be prepared in a composite form with a metallic, ceramic or polymerbinder. This method is suitable for tailoring of mechanical properties; nevertheless,it does not produce SiC form applicable for laboratory purposes.Binder-free sintering of SiC is practically impossible, despite decreased chemical resistivity of the produced material. Pure SiC is insoluble in all acids except hydrofluoric acid.Reaction of SiC with HF is enabled only due to residual SiO2 created during the industrial production.However, SiO2 located between the planes of growth of SiC

Druh

D - Stať ve sborníku

CEP obor

JG - Hutnictví, kovové materiály

OECD FORD obor

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Projekt

<a href="/cs/project/GB14-36566G" target="_blank" >GB14-36566G: Multidisciplinární výzkumné centrum moderních materiálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Proceedings of the 2nd International Conference on Chemical Technology

ISBN

978-80-86238-64-7

ISSN

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e-ISSN

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Počet stran výsledku

6

Strana od-do

129-134

Název nakladatele

Czech Society of Industrial Chemistry

Místo vydání

Prague

Místo konání akce

Mikulov

Datum konání akce

7. 4. 2014

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

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