GaN: Co epitaxial layers grown by MOVPE

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43897462" target="_blank" >RIV/60461373:22310/15:43897462 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/15:00456264

Výsledek na webu

<a href="http://ac.els-cdn.com/S0022024814007167/1-s2.0-S0022024814007167-main.pdf?_tid=3521dd9c-9914-11e4-87e4-00000aab0f6b&acdnat=1420927459_183edf0d1fe1cdfcd244d481f2f30688" target="_blank" >http://ac.els-cdn.com/S0022024814007167/1-s2.0-S0022024814007167-main.pdf?_tid=3521dd9c-9914-11e4-87e4-00000aab0f6b&acdnat=1420927459_183edf0d1fe1cdfcd244d481f2f30688</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2014.10.031" target="_blank" >10.1016/j.jcrysgro.2014.10.031</a>

Jazyk výsledku

angličtina

Název v původním jazyce

GaN: Co epitaxial layers grown by MOVPE

Popis výsledku v původním jazyce

We present a growth of GaN layers doped by cobalt using low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. The in situ doping of GaN by Co was performed by the decomposition of bis(cyclopentadienyl)cobalt precursor. Three parameters, the temperature and pressure of the deposition and the Ga/Co ratio in the gas phase, influencing cobalt concentration were investigated. The obtained results were confronted with the thermodynamic predictions of Co solubility within GaN lattice and electronic structure calculations of GaN:Co. The magnetic properties of GaN:Co thin films were investigated using superconducting quantum interference device magnetometer. In addition, the layers were characterized by Raman and photoluminescence spectroscopy and atomic force microscopy. The concentration of Co was measured using electron microprobe and depth profile was measured using secondary ion mass spectroscopy. Room temperature ferromagnetic ordering was observed on the Co doped GaN layers

Název v anglickém jazyce

GaN: Co epitaxial layers grown by MOVPE

Popis výsledku anglicky

We present a growth of GaN layers doped by cobalt using low pressure metalorganic vapor phase epitaxy on c-plane sapphire substrates. The in situ doping of GaN by Co was performed by the decomposition of bis(cyclopentadienyl)cobalt precursor. Three parameters, the temperature and pressure of the deposition and the Ga/Co ratio in the gas phase, influencing cobalt concentration were investigated. The obtained results were confronted with the thermodynamic predictions of Co solubility within GaN lattice and electronic structure calculations of GaN:Co. The magnetic properties of GaN:Co thin films were investigated using superconducting quantum interference device magnetometer. In addition, the layers were characterized by Raman and photoluminescence spectroscopy and atomic force microscopy. The concentration of Co was measured using electron microprobe and depth profile was measured using secondary ion mass spectroscopy. Room temperature ferromagnetic ordering was observed on the Co doped GaN layers

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

—

Projekt

<a href="/cs/project/GA13-20507S" target="_blank" >GA13-20507S: Tenké vrstvy magneticky dopovaného GaN</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal Cryst.Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

414

Číslo periodika v rámci svazku

15 March 2015

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

62-68

Kód UT WoS článku

000349602900012

EID výsledku v databázi Scopus

—