Influence of gallium on infrared luminescence in Er3 doped Yb3Al5-yGayO12 films grown by the liquid phase epitaxy

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F15%3A43899716" target="_blank" >RIV/60461373:22310/15:43899716 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/15:00448583 RIV/00216208:11320/15:10316211

Výsledek na webu

<a href="http://www.sciencedirect.com/science/article/pii/S0022231315001738" target="_blank" >http://www.sciencedirect.com/science/article/pii/S0022231315001738</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jlumin.2015.03.030" target="_blank" >10.1016/j.jlumin.2015.03.030</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of gallium on infrared luminescence in Er3 doped Yb3Al5-yGayO12 films grown by the liquid phase epitaxy

Popis výsledku v původním jazyce

Erbium (Er3+) doped ytterbium garnet Yb3Al5-yGayO12 (y=0, 0.55 and 1.1, YbAGG) thick films were grown by the isothermal liquid phase epitaxy method (LPE) on LuAG or YAG substrates. The influence of gallium on the photoluminescent properties of Er3+ is presented in this paper. Room temperature transmission and emission spectra were measured for the 0.5 at% Er3+:YbAGG films with a different doping level of Ga. Also Er3+:Yb3Al3.9Ga1.1O12 (y=1.1) films with a different doping level of erbium (0.5, 1 and 2 at%) were tested. The presence of gallium significantly affects the fine splitting and total intensity of erbium emission in an infrared region (the transition I-4(13/2)-> I-4(15/2)). Even at the highest doping level of erbium (2 at%), no up-conversion luminescence was observed, resulting in a maximum efficiency of the infrared emission. The lifetime of luminescence at 1530 nm was studied for all samples.

Název v anglickém jazyce

Influence of gallium on infrared luminescence in Er3 doped Yb3Al5-yGayO12 films grown by the liquid phase epitaxy

Popis výsledku anglicky

Erbium (Er3+) doped ytterbium garnet Yb3Al5-yGayO12 (y=0, 0.55 and 1.1, YbAGG) thick films were grown by the isothermal liquid phase epitaxy method (LPE) on LuAG or YAG substrates. The influence of gallium on the photoluminescent properties of Er3+ is presented in this paper. Room temperature transmission and emission spectra were measured for the 0.5 at% Er3+:YbAGG films with a different doping level of Ga. Also Er3+:Yb3Al3.9Ga1.1O12 (y=1.1) films with a different doping level of erbium (0.5, 1 and 2 at%) were tested. The presence of gallium significantly affects the fine splitting and total intensity of erbium emission in an infrared region (the transition I-4(13/2)-> I-4(15/2)). Even at the highest doping level of erbium (2 at%), no up-conversion luminescence was observed, resulting in a maximum efficiency of the infrared emission. The lifetime of luminescence at 1530 nm was studied for all samples.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

CA - Anorganická chemie

OECD FORD obor

—

Projekt

<a href="/cs/project/GBP108%2F12%2FG108" target="_blank" >GBP108/12/G108: Příprava, modifikace a charakterizace materiálů zářením</a><br>

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Luminescence

ISSN

0022-2313

e-ISSN

—

Svazek periodika

164

Číslo periodika v rámci svazku

August

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

4

Strana od-do

90-93

Kód UT WoS článku

000356734800012

EID výsledku v databázi Scopus

—