Luminescence at 2.8 ?m: Er3+-doped chalcogenide micro-waveguide

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F16%3A39901471" target="_blank" >RIV/00216275:25310/16:39901471 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.optmat.2016.06.009" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2016.06.009</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.optmat.2016.06.009" target="_blank" >10.1016/j.optmat.2016.06.009</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Luminescence at 2.8 ?m: Er3+-doped chalcogenide micro-waveguide

Popis výsledku v původním jazyce

This paper reports the fabrication of luminescent optical rib/ridge waveguides made of erbium doped Ga-Ge-Sb-S films deposited by RF magnetron sputtering. Several fluorescence emissions of Er3+ ions from the visible to the middle infrared spectral domain were clearly observed within the films. The study of the 4I(13/2) level lifetime enabled development of a suitable annealing treatment of the films to reach the value of the bulk counterpart while the variation in surface roughness was limited, thus ensuring reasonable optical losses (0.7-0.9 dB/cm). Amplification experiments were carried out at 1.54 ?m leading to complete characterization of the erbium-doped micro-waveguide with 3.4 dB/cm on/off gain. A demonstration of mid-IR photoluminescence from Er3+-doped chalcogenide micro-waveguide was recorded at 2.76 ?m. The multi-luminescence from the visible to mid-IR generated using erbium doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunication technologies or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.

Název v anglickém jazyce

Luminescence at 2.8 ?m: Er3+-doped chalcogenide micro-waveguide

Popis výsledku anglicky

This paper reports the fabrication of luminescent optical rib/ridge waveguides made of erbium doped Ga-Ge-Sb-S films deposited by RF magnetron sputtering. Several fluorescence emissions of Er3+ ions from the visible to the middle infrared spectral domain were clearly observed within the films. The study of the 4I(13/2) level lifetime enabled development of a suitable annealing treatment of the films to reach the value of the bulk counterpart while the variation in surface roughness was limited, thus ensuring reasonable optical losses (0.7-0.9 dB/cm). Amplification experiments were carried out at 1.54 ?m leading to complete characterization of the erbium-doped micro-waveguide with 3.4 dB/cm on/off gain. A demonstration of mid-IR photoluminescence from Er3+-doped chalcogenide micro-waveguide was recorded at 2.76 ?m. The multi-luminescence from the visible to mid-IR generated using erbium doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunication technologies or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

JH - Keramika, žáruvzdorné materiály a skla

OECD FORD obor

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Projekt

<a href="/cs/project/GA16-17921S" target="_blank" >GA16-17921S: Heterostruktury založené na chalkogenidech pro nelineární optiku a optické senzory</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2016

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Optical Materials

ISSN

0925-3467

e-ISSN

—

Svazek periodika

58

Číslo periodika v rámci svazku

August

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

390-397

Kód UT WoS článku

000381593900057

EID výsledku v databázi Scopus

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