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Role of ion bombardment, film thickness and temperature of annealing on PEC activity of very-thin film hematite photoanodes deposited by advanced magnetron sputtering

Identifikátory výsledku

  • Kód výsledku v IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F16%3A43902470" target="_blank" >RIV/60461373:22310/16:43902470 - isvavai.cz</a>

  • Nalezeny alternativní kódy

    RIV/61989592:15310/16:33160273 RIV/60461373:22350/16:43902470

  • Výsledek na webu

    <a href="http://dx.doi.org/10.1016/j.ijhydene.2015.12.199" target="_blank" >http://dx.doi.org/10.1016/j.ijhydene.2015.12.199</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.ijhydene.2015.12.199" target="_blank" >10.1016/j.ijhydene.2015.12.199</a>

Alternativní jazyky

  • Jazyk výsledku

    angličtina

  • Název v původním jazyce

    Role of ion bombardment, film thickness and temperature of annealing on PEC activity of very-thin film hematite photoanodes deposited by advanced magnetron sputtering

  • Popis výsledku v původním jazyce

    A High Power Impulse Magnetron Sputtering (HiPIMS) system was used for deposition of hematite thin films. Ion flux density on substrate was studied for different pulse discharge current densities corresponding to different pulsing frequencies of cathode voltage. Total thermal power flux density on substrate was investigated for the same plasma conditions as ion flux density was measured. Our findings revealed the pulse ion flux density on substrate linearly increases with pulse discharge current density whilst the total thermal power density decreases on about 50% when discharge pulsing frequency falls from 50 kHz to 100 Hz. Our previous investigation proved that the change in the discharge pulsing frequency has significant influence on microstructure of deposited hematite thin film. Results of our study imply that magnitude of the ion flux density on substrate leads to highly textured hematite thin film oriented along the desired (110) plane. Nevertheless the ion flux density on substrate is not substantial contribution to the total energy balance on substrate. Other elementary processes taking place on substrate probably can play a significant role in hematite thin film formation. The highest photocurrents of 0.86 mA cm(-2) at 0.55 V and 0.99 mA cm(-2) at 0.7 V vs. Ag/AgCl was revealed for the HiPIMS deposited films having the thickness of 25 nm and after the thermal treatment at 750 degrees C for 30 min. The photocurrents of 0.7 mA cm(-2) at 0.55 V and 0.82 mA cm(-2) at 0.7 V vs. Ag/AgCl of hematite films annealed at 650 degrees C for 30 min were reached when the voltage bias was applied to the FTO substrate during the deposition.

  • Název v anglickém jazyce

    Role of ion bombardment, film thickness and temperature of annealing on PEC activity of very-thin film hematite photoanodes deposited by advanced magnetron sputtering

  • Popis výsledku anglicky

    A High Power Impulse Magnetron Sputtering (HiPIMS) system was used for deposition of hematite thin films. Ion flux density on substrate was studied for different pulse discharge current densities corresponding to different pulsing frequencies of cathode voltage. Total thermal power flux density on substrate was investigated for the same plasma conditions as ion flux density was measured. Our findings revealed the pulse ion flux density on substrate linearly increases with pulse discharge current density whilst the total thermal power density decreases on about 50% when discharge pulsing frequency falls from 50 kHz to 100 Hz. Our previous investigation proved that the change in the discharge pulsing frequency has significant influence on microstructure of deposited hematite thin film. Results of our study imply that magnitude of the ion flux density on substrate leads to highly textured hematite thin film oriented along the desired (110) plane. Nevertheless the ion flux density on substrate is not substantial contribution to the total energy balance on substrate. Other elementary processes taking place on substrate probably can play a significant role in hematite thin film formation. The highest photocurrents of 0.86 mA cm(-2) at 0.55 V and 0.99 mA cm(-2) at 0.7 V vs. Ag/AgCl was revealed for the HiPIMS deposited films having the thickness of 25 nm and after the thermal treatment at 750 degrees C for 30 min. The photocurrents of 0.7 mA cm(-2) at 0.55 V and 0.82 mA cm(-2) at 0.7 V vs. Ag/AgCl of hematite films annealed at 650 degrees C for 30 min were reached when the voltage bias was applied to the FTO substrate during the deposition.

Klasifikace

  • Druh

    J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

  • CEP obor

    CG - Elektrochemie

  • OECD FORD obor

Návaznosti výsledku

  • Projekt

    Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

  • Návaznosti

    I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Ostatní

  • Rok uplatnění

    2016

  • Kód důvěrnosti údajů

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Údaje specifické pro druh výsledku

  • Název periodika

    International Journal of Hydrogen Energy

  • ISSN

    0360-3199

  • e-ISSN

  • Svazek periodika

    41

  • Číslo periodika v rámci svazku

    27

  • Stát vydavatele periodika

    GB - Spojené království Velké Británie a Severního Irska

  • Počet stran výsledku

    11

  • Strana od-do

    11547-11557

  • Kód UT WoS článku

    000380627500007

  • EID výsledku v databázi Scopus