Synthesis of graphene on metal/SiC structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F17%3A43914087" target="_blank" >RIV/60461373:22310/17:43914087 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.intechopen.com/books/graphene-materials-structure-properties-and-modifications/synthesis-of-graphene-on-metal-sic-structure" target="_blank" >https://www.intechopen.com/books/graphene-materials-structure-properties-and-modifications/synthesis-of-graphene-on-metal-sic-structure</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.5772/67465" target="_blank" >10.5772/67465</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Synthesis of graphene on metal/SiC structure

Popis výsledku v původním jazyce

The chapter deals with the synthesis of graphene on metal/SiC substrates. The graphene synthesis is pursued at a relatively low temperature. The method can be used for the graphene transfer from SiC to dielectric materials. Annealing of the structure results in a chemical reaction of a metal with SiC forming silicides and carbon-rich products at the boundary between metal and silicon carbide. Carbon atoms segregate at the top of metal/ metal silicide layer during the cooling period of the process. The chapter is divided into the following sections: Introduction, Structure preparation, Graphene preparation from the structure Ni/SiC, Graphene preparation from the structure Co/SiC, Application of other metals, Influence of additive materials, and Conclusion.

Název v anglickém jazyce

Synthesis of graphene on metal/SiC structure

Popis výsledku anglicky

The chapter deals with the synthesis of graphene on metal/SiC substrates. The graphene synthesis is pursued at a relatively low temperature. The method can be used for the graphene transfer from SiC to dielectric materials. Annealing of the structure results in a chemical reaction of a metal with SiC forming silicides and carbon-rich products at the boundary between metal and silicon carbide. Carbon atoms segregate at the top of metal/ metal silicide layer during the cooling period of the process. The chapter is divided into the following sections: Introduction, Structure preparation, Graphene preparation from the structure Ni/SiC, Graphene preparation from the structure Co/SiC, Application of other metals, Influence of additive materials, and Conclusion.

Druh

C - Kapitola v odborné knize

CEP obor

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OECD FORD obor

20501 - Materials engineering

Projekt

<a href="/cs/project/GA17-00607S" target="_blank" >GA17-00607S: Komplexní umělé elektromagnetické struktury a nanostruktury</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název knihy nebo sborníku

Graphene Materials - Structure, Properties and Modifications

ISBN

978-953-51-3139-7

Počet stran výsledku

25

Strana od-do

205-229

Počet stran knihy

247

Název nakladatele

InTech

Místo vydání

Rijeka

Kód UT WoS kapitoly

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