Solution‐Based Processing of Optoelectronically Active Indium Selenide

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F60461373%3A22310%2F18%3A43915742" target="_blank" >RIV/60461373:22310/18:43915742 - isvavai.cz</a>

Výsledek na webu

<a href="https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201802990" target="_blank" >https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201802990</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/adma.201802990" target="_blank" >10.1002/adma.201802990</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Solution‐Based Processing of Optoelectronically Active Indium Selenide

Popis výsledku v původním jazyce

Layered indium selenide (InSe) presents unique properties for high-performance electronic and optoelectronic device applications. However, efforts to process InSe using traditional liquid phase exfoliation methods based on surfactant-assisted aqueous dispersions or organic solvents with high boiling points compromise electronic properties due to residual surface contamination and chemical degradation. Here, these limitations are overcome by utilizing a surfactant-free, low boiling point, deoxygenated cosolvent system. The resulting InSe flakes and thin films possess minimal processing residues and are structurally and chemically pristine. When employed in photodetectors, individual InSe nanosheets exhibit a maximum photoresponsivity of approximate to 5 x 10(7) A W-1, which is the highest value of any solution-processed monolithic semiconductor to date. Furthermore, the surfactant-free cosolvent system not only stabilizes InSe dispersions but is also amenable to the assembly of electronically percolating InSe flake arrays without posttreatment, which enables the realization of ultrahigh performance thin-film photodetectors. This surfactant-free, deoxygenated cosolvent approach can be generalized to other layered materials, thereby presenting additional opportunities for solution-processed thin-film electronic and optoelectronic technologies.

Název v anglickém jazyce

Solution‐Based Processing of Optoelectronically Active Indium Selenide

Popis výsledku anglicky

Layered indium selenide (InSe) presents unique properties for high-performance electronic and optoelectronic device applications. However, efforts to process InSe using traditional liquid phase exfoliation methods based on surfactant-assisted aqueous dispersions or organic solvents with high boiling points compromise electronic properties due to residual surface contamination and chemical degradation. Here, these limitations are overcome by utilizing a surfactant-free, low boiling point, deoxygenated cosolvent system. The resulting InSe flakes and thin films possess minimal processing residues and are structurally and chemically pristine. When employed in photodetectors, individual InSe nanosheets exhibit a maximum photoresponsivity of approximate to 5 x 10(7) A W-1, which is the highest value of any solution-processed monolithic semiconductor to date. Furthermore, the surfactant-free cosolvent system not only stabilizes InSe dispersions but is also amenable to the assembly of electronically percolating InSe flake arrays without posttreatment, which enables the realization of ultrahigh performance thin-film photodetectors. This surfactant-free, deoxygenated cosolvent approach can be generalized to other layered materials, thereby presenting additional opportunities for solution-processed thin-film electronic and optoelectronic technologies.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10402 - Inorganic and nuclear chemistry

Projekt

<a href="/cs/project/GA17-11456S" target="_blank" >GA17-11456S: Nanostruktury vrstevnatých dichalkogenidů přechodných kovů pro elektrokatalýzu</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Advanced Materials

ISSN

0935-9648

e-ISSN

—

Svazek periodika

30

Číslo periodika v rámci svazku

38

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

8

Strana od-do

1802990

Kód UT WoS článku

000444671900023

EID výsledku v databázi Scopus

2-s2.0-85052679009